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Information Journal Paper

Title

THE IMPACT OF STRUCTURAL PARAMETERS ON THE PERFORMANCE OF NANOSCALE DG-SOI MOSFETS IN SUB THRESHOLD REGION

Pages

  15-19

Abstract

 This paper is intended to investigate the impact of structural parameters (in particular: body thickness (TBody), Source/Drain Length (LS /LD) and gate oxide thickness (TOX)) on the ELECTRICAL CHARACTERISTICS of nanoscale Double Gate SOI MOSFET (DG SOI MOSFET) in subthreshold regime. It will be shown that a reduction in Ls /Ld doesn’t have a profound effect on both on-current and Drain Induced Barrier Lowering Effect (DIBL); however it increases the effective Gate Capacitance (CGeff) significantly. A decrease in Tbody results in an increase in CGeff and a decrease in potential barrier height while ION is reduced.This investigation also proves that as TOX is increased, CGeff is decreased. A decline in TOX reduces ION while it drastically increases ION /IOFF ratio.

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    APA: Copy

    KOHANI, FATEMEH, NEMATIAN, HAMED, & FATHIPOUR, MORTEZA. (2010). THE IMPACT OF STRUCTURAL PARAMETERS ON THE PERFORMANCE OF NANOSCALE DG-SOI MOSFETS IN SUB THRESHOLD REGION. JOURNAL OF ELECTRICAL ENGINEERING SCIENCE, 1(1), 15-19. SID. https://sid.ir/paper/201542/en

    Vancouver: Copy

    KOHANI FATEMEH, NEMATIAN HAMED, FATHIPOUR MORTEZA. THE IMPACT OF STRUCTURAL PARAMETERS ON THE PERFORMANCE OF NANOSCALE DG-SOI MOSFETS IN SUB THRESHOLD REGION. JOURNAL OF ELECTRICAL ENGINEERING SCIENCE[Internet]. 2010;1(1):15-19. Available from: https://sid.ir/paper/201542/en

    IEEE: Copy

    FATEMEH KOHANI, HAMED NEMATIAN, and MORTEZA FATHIPOUR, “THE IMPACT OF STRUCTURAL PARAMETERS ON THE PERFORMANCE OF NANOSCALE DG-SOI MOSFETS IN SUB THRESHOLD REGION,” JOURNAL OF ELECTRICAL ENGINEERING SCIENCE, vol. 1, no. 1, pp. 15–19, 2010, [Online]. Available: https://sid.ir/paper/201542/en

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