RECEIVER PROTECTIVE CIRCUIT DESIGN WITH HIGH POWER HANDLING BASED ON SCATTERING PARAMETERS ANALYSIS

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MALEKSHAHI MOHAMMAD; MEHR SHAHI ESFANDIAR

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

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Paper Information

Journal: ELECTRONIC INDUSTRIES Year:2011 | Volume:2 | Issue:2 (6) Page(s): 41-57

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Information Journal Paper

Title

RECEIVER PROTECTIVE CIRCUIT DESIGN WITH HIGH POWER HANDLING BASED ON SCATTERING PARAMETERS ANALYSIS

Author(s)

MALEKSHAHI MOHAMMAD | MEHR SHAHI ESFANDIAR | Issue Writer Certificate

Keywords

P-I-N DIODESQ3

POWER DISSIPATIONQ2

POWER HANDLINGQ3

RECEIVER PROTECTOR CIRCUITQ3

SCATTERING PARAMETERSQ3

Abstract

In this Paper a New Technique to Design Receiver Protector Based on S-Parameters is Presented. The Main Goal is to Achieve Maximum POWER HANDLING. In Conventional Way Analyzing and Optimizing Power is Needed to Reach Maximum POWER HANDLING. In the Proposed Method We Present a Protective Circuit With High POWER HANDLING and Selective Frequency Characteristic that Uses Only the S- Parameters.

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APA: Copy

MALEKSHAHI, MOHAMMAD, & MEHR SHAHI, ESFANDIAR. (2011). RECEIVER PROTECTIVE CIRCUIT DESIGN WITH HIGH POWER HANDLING BASED ON SCATTERING PARAMETERS ANALYSIS. ELECTRONIC INDUSTRIES, 2(2 (6)), 41-57. SID. https://sid.ir/paper/229578/en

Vancouver: Copy

MALEKSHAHI MOHAMMAD, MEHR SHAHI ESFANDIAR. RECEIVER PROTECTIVE CIRCUIT DESIGN WITH HIGH POWER HANDLING BASED ON SCATTERING PARAMETERS ANALYSIS. ELECTRONIC INDUSTRIES[Internet]. 2011;2(2 (6)):41-57. Available from: https://sid.ir/paper/229578/en

IEEE: Copy

MOHAMMAD MALEKSHAHI, and ESFANDIAR MEHR SHAHI, “RECEIVER PROTECTIVE CIRCUIT DESIGN WITH HIGH POWER HANDLING BASED ON SCATTERING PARAMETERS ANALYSIS,” ELECTRONIC INDUSTRIES, vol. 2, no. 2 (6), pp. 41–57, 2011, [Online]. Available: https://sid.ir/paper/229578/en

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