A Fully Differential Ultra Wideband Common-Gate Low Noise Amplifier

Q: How can I download an article?

To download an article from SID, first log in to the site, search for the article title, and click on the 'Download Article' option.

Q: How can I download an ISI article?

To download an ISI article on SID, enter the keyword or article title in the search bar, view the relevant results, click on the desired article, and select the 'Download Article' option.

Q: How can I access the SID database?

To access the SID database, visit SID.ir, create an account, and log in to access scientific resources.

Q: Is downloading articles from SID free?

Some articles on SID are available for free, while others require payment. Details are specified on the article's page.

SALEHI NASER; BEKRANI MEHDI; Zayyani Hadi; taskhiri mohammad mehdi

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Journal Paper

Paper Information

Journal: ELECTRONIC INDUSTRIES Year:2019 | Volume:10 | Issue:3 Page(s): 43-58

Download Full-Text

Persian Verion

View:

633

Download:

Cites:

Information Journal Paper

Title

A Fully Differential Ultra Wideband Common-Gate Low Noise Amplifier

Author(s)

SALEHI NASER | BEKRANI MEHDI | Zayyani Hadi | taskhiri mohammad mehdi | Issue Writer Certificate

Keywords

Low noise amplifierQ1

Ultra widebandQ1

Current reuseQ1

Gain boostingQ1

Capacitors cross coupledQ1

Abstract

Along with increasing in the number of telecommunication standards, the demand for multi-standard transmitters / receivers has been raised. The aim of this paper is to design and simulate an LNA that covers the full band of UWB and involve the available standards as well. Accordingly, the main design parameters including noise, gain, input matching, current level, and voltage level are determined so as to achieve an effective operation in the band of 3. 1 GHz to 10. 6 GHz. The proposed structure is a differential common-gate associated with the gain-boosting and current-reused techniques. Applying the proposed common-gate structure in the LNA in CMOS 0. 18μ m technology, the power consumption achieves a considerable reduction compared to other LNA counterparts. In addition, the noise figure is reduced to 1. 8dB with a gain of 12. 8 dB to 13. 6 dB, a linearity of-7dBm is achieved, and the input reflection coefficient is reduced to less than-10 dB.

Cites

No record.

References

No record.

Cite

APA: Copy

SALEHI, NASER, BEKRANI, MEHDI, Zayyani, Hadi, & taskhiri, mohammad mehdi. (2019). A Fully Differential Ultra Wideband Common-Gate Low Noise Amplifier. ELECTRONIC INDUSTRIES, 10(3 ), 43-58. SID. https://sid.ir/paper/229672/en

Vancouver: Copy

SALEHI NASER, BEKRANI MEHDI, Zayyani Hadi, taskhiri mohammad mehdi. A Fully Differential Ultra Wideband Common-Gate Low Noise Amplifier. ELECTRONIC INDUSTRIES[Internet]. 2019;10(3 ):43-58. Available from: https://sid.ir/paper/229672/en

IEEE: Copy

NASER SALEHI, MEHDI BEKRANI, Hadi Zayyani, and mohammad mehdi taskhiri, “A Fully Differential Ultra Wideband Common-Gate Low Noise Amplifier,” ELECTRONIC INDUSTRIES, vol. 10, no. 3 , pp. 43–58, 2019, [Online]. Available: https://sid.ir/paper/229672/en

Related Journal Papers