BIMS: Built-in Intermediate Memory Structure to Improve Multi-Level Phase Change Memories

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Nabavi Larimi S.S.; KAMAL MAHDI; AFZALI KUSHA A.

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Paper Information

Journal: TABRIZ JOURNAL OF ELECTRICAL ENGINEERING Year:2019 | Volume:49 | Issue:3 (89) Page(s): 1405-1414

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Information Journal Paper

Title

BIMS: Built-in Intermediate Memory Structure to Improve Multi-Level Phase Change Memories

Author(s)

Nabavi Larimi S.S. | KAMAL MAHDI | AFZALI KUSHA A. | Issue Writer Certificate

Keywords

Phase change memoryQ1

memory managmentQ1

pageQ1

multi-level cellQ1

access timeQ1

energy consumptionQ1

Abstract

In this paper, we propose a Built-in Intermediate Memory Structure (BIMS) to improve the efficiency of main memory architectures based on page=1&sort=1&ftyp=all&fgrp=all&fyrs=all" target="_blank">Phase change memory (PCM). It exploits the capability of the PCM device which can be used as both multilevel cell (MLC) and single-level cell (SLC) during the processor operation. The proposed structure invokes physical pages with MLC devices for a normal data storage. By utilizing an internal page management mechanism, however, it turns memory cells of some unused physical pages into the SLC mode. BIMS exploits such pages to provide an intermediate layer for the memory read and write requests with better access time and lower energy consumption. This intermediate layer diminishes most of the accesses to the pages with the MLC devices by absorbing most of the incoming memory requests.

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APA: Copy

Nabavi Larimi, S.S., KAMAL, MAHDI, & AFZALI KUSHA, A.. (2019). BIMS: Built-in Intermediate Memory Structure to Improve Multi-Level Phase Change Memories. TABRIZ JOURNAL OF ELECTRICAL ENGINEERING, 49(3 (89) ), 1405-1414. SID. https://sid.ir/paper/256518/en

Vancouver: Copy

Nabavi Larimi S.S., KAMAL MAHDI, AFZALI KUSHA A.. BIMS: Built-in Intermediate Memory Structure to Improve Multi-Level Phase Change Memories. TABRIZ JOURNAL OF ELECTRICAL ENGINEERING[Internet]. 2019;49(3 (89) ):1405-1414. Available from: https://sid.ir/paper/256518/en

IEEE: Copy

S.S. Nabavi Larimi, MAHDI KAMAL, and A. AFZALI KUSHA, “BIMS: Built-in Intermediate Memory Structure to Improve Multi-Level Phase Change Memories,” TABRIZ JOURNAL OF ELECTRICAL ENGINEERING, vol. 49, no. 3 (89) , pp. 1405–1414, 2019, [Online]. Available: https://sid.ir/paper/256518/en

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