مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

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Information Journal Paper

Title

A NEW LOW-VOLTAGE, LOW-POWER AND HIGH-SLEW RATE CMOS UNITY-GAIN BUFFER

Pages

  38-44

Abstract

 Abstract: CLASS-AB CIRCUITS, which are capable of dealing with currents several orders of magnitude larger than their quiescent current, are good candidates for low-power and high slew-rate analog design. This paper presents a novel topology of a class AB FLIPPED VOLTAGE FOLLOWER (FVF) that has better slew rate and the same power consumption as the conventional class-AB FVF buffer previously presented in literature. It is thus suitable for low-voltage and low-power stages requiring low bias currents. These buffers have been simulated using 0.5 mm CMOS Technology models provided by IBM. The buffer consumes 16 mA from a 0.9 V supply and has a bandwidth of 52 MHz with an 18 pF load. It has a slew rate of 10.3 V/ms and power consumption of 36 mw.

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    APA: Copy

    PIRY, M., KHANJANIMOAF, M., & AMIRI, P.. (2014). A NEW LOW-VOLTAGE, LOW-POWER AND HIGH-SLEW RATE CMOS UNITY-GAIN BUFFER. IRANIAN JOURNAL OF ELECTRICAL AND ELECTRONIC ENGINEERING, 10(1), 38-44. SID. https://sid.ir/paper/299880/en

    Vancouver: Copy

    PIRY M., KHANJANIMOAF M., AMIRI P.. A NEW LOW-VOLTAGE, LOW-POWER AND HIGH-SLEW RATE CMOS UNITY-GAIN BUFFER. IRANIAN JOURNAL OF ELECTRICAL AND ELECTRONIC ENGINEERING[Internet]. 2014;10(1):38-44. Available from: https://sid.ir/paper/299880/en

    IEEE: Copy

    M. PIRY, M. KHANJANIMOAF, and P. AMIRI, “A NEW LOW-VOLTAGE, LOW-POWER AND HIGH-SLEW RATE CMOS UNITY-GAIN BUFFER,” IRANIAN JOURNAL OF ELECTRICAL AND ELECTRONIC ENGINEERING, vol. 10, no. 1, pp. 38–44, 2014, [Online]. Available: https://sid.ir/paper/299880/en

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