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Information Journal Paper

Title

MAGNETORESISTANCE OF NON-180O DOMAIN WALL IN THE PRESENCE OF ELECTRON-PHOTON INTERACTION

Pages

  1-5

Abstract

 In the present paper, influence of photon on resistance of non-180o domain wall in metallic magnetic nanowires has been studied using the semiclassical approach. The analysis has been based on the Boltzmann transport equation, within the relaxation time approximation. The one-dimensional Neel-type domain wall between two ferromagnetic domains with relative magnetization angle less than 180° is considered. By increasing this angle, the contribution of the domain wall in the resistivity of the nanowire becomes considerable. It is also found that the fundamental contribution of the domain wall in resistivity can be controlled by propagating photon. These results are valuable in designing spintronic devices based on magnetic nanowires.

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    Cite

    APA: Copy

    MAJIDI, ROYA. (2013). MAGNETORESISTANCE OF NON-180O DOMAIN WALL IN THE PRESENCE OF ELECTRON-PHOTON INTERACTION. INTERNATIONAL NANO LETTERS (INL), 3(3), 1-5. SID. https://sid.ir/paper/321367/en

    Vancouver: Copy

    MAJIDI ROYA. MAGNETORESISTANCE OF NON-180O DOMAIN WALL IN THE PRESENCE OF ELECTRON-PHOTON INTERACTION. INTERNATIONAL NANO LETTERS (INL)[Internet]. 2013;3(3):1-5. Available from: https://sid.ir/paper/321367/en

    IEEE: Copy

    ROYA MAJIDI, “MAGNETORESISTANCE OF NON-180O DOMAIN WALL IN THE PRESENCE OF ELECTRON-PHOTON INTERACTION,” INTERNATIONAL NANO LETTERS (INL), vol. 3, no. 3, pp. 1–5, 2013, [Online]. Available: https://sid.ir/paper/321367/en

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