THE CRYSTAL GROWTH OF P-TYPE THERMOELECTRIC SEMICONDUCTOR (BI2TE3)X (SB2TE3)1-X WITH 0.2£X£0.30 
AND CHARACTERIZATION OF THE THERMOELECTRIC PARAMETERS TO ACHIEVE MAXIMUM FIGURE 
OF MMERIT

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KAVEHEI GH.; ALAH KARAMI M.

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Paper Information

Journal: JOURNAL OF FACULTY OF ENGINEERING (UNIVERSITY OF TABRIZ) Year:2007 | Volume:34 | Issue:2 (47) MECHANICAL ENGINEERING Page(s): 47-53

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Title

THE CRYSTAL GROWTH OF P-TYPE THERMOELECTRIC SEMICONDUCTOR (BI2TE3)X (SB2TE3)1-X WITH 0.2£X£0.30 AND CHARACTERIZATION OF THE THERMOELECTRIC PARAMETERS TO ACHIEVE MAXIMUM FIGURE OF MMERIT

Author(s)

KAVEHEI GH. | ALAH KARAMI M. | Issue Writer Certificate

Keywords

CRYSTAL GROWTHQ1

SCANNING ELECTRON MICROSCOPY (SEM)Q1

ELECTRICAL CONDUCTIVITYQ1

SEEBECK COEFFICIENTQ1

THERMAL CONDUCTIVITYQ1

FIGURE OF MERITQ1

Abstract

In this experimental work, pure elements, Te, Bi and Sb with 5N purity, were used to grow p-type thermoelectric crystals. Then in quartz capsules at 10-6 Torr pressure, (Bi2Te3)x(Sb2Te3)1-x solid solutions with 0.20£x£0.30 were prepared .The samples were crystallized by zone melting method with the velocity of 8 mm per an hour at 720°C and annealed at 370°C for 24 hours for heat stress relieving. Scanning electron microscopy (SEM) was used to characterize the quality of CRYSTAL GROWTH. ELECTRICAL CONDUCTIVITYs, SEEBECK COEFFICIENT a and THERMAL CONDUCTIVITY K, of the prepared samples were measured to obtain FIGURE OF MERIT from the Z=a2s/K formula. The optimum value for x=0.25 yielded the value of 2.654x10-3K-1 for Z.

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APA: Copy

KAVEHEI, GH., & ALAH KARAMI, M.. (2007). THE CRYSTAL GROWTH OF P-TYPE THERMOELECTRIC SEMICONDUCTOR (BI₂TE₃)_X (SB₂TE₃)_1-X WITH 0.2£X£0.30 AND CHARACTERIZATION OF THE THERMOELECTRIC PARAMETERS TO ACHIEVE MAXIMUM FIGURE OF MMERIT. JOURNAL OF FACULTY OF ENGINEERING (UNIVERSITY OF TABRIZ), 34(2 (47) MECHANICAL ENGINEERING), 47-53. SID. https://sid.ir/paper/43765/en

Vancouver: Copy

KAVEHEI GH., ALAH KARAMI M.. THE CRYSTAL GROWTH OF P-TYPE THERMOELECTRIC SEMICONDUCTOR (BI₂TE₃)_X (SB₂TE₃)_1-X WITH 0.2£X£0.30 AND CHARACTERIZATION OF THE THERMOELECTRIC PARAMETERS TO ACHIEVE MAXIMUM FIGURE OF MMERIT. JOURNAL OF FACULTY OF ENGINEERING (UNIVERSITY OF TABRIZ)[Internet]. 2007;34(2 (47) MECHANICAL ENGINEERING):47-53. Available from: https://sid.ir/paper/43765/en

IEEE: Copy

GH. KAVEHEI, and M. ALAH KARAMI, “THE CRYSTAL GROWTH OF P-TYPE THERMOELECTRIC SEMICONDUCTOR (BI₂TE₃)_X (SB₂TE₃)_1-X WITH 0.2£X£0.30 AND CHARACTERIZATION OF THE THERMOELECTRIC PARAMETERS TO ACHIEVE MAXIMUM FIGURE OF MMERIT,” JOURNAL OF FACULTY OF ENGINEERING (UNIVERSITY OF TABRIZ), vol. 34, no. 2 (47) MECHANICAL ENGINEERING, pp. 47–53, 2007, [Online]. Available: https://sid.ir/paper/43765/en