The basic requirements of the CdS thin films on their applications are high optical transparency, low electrical resistivity, and better crystalinity (e. g. high orientation). Firstly, we prepared CdS films by thermal evaporation techniques on glass substrate and then studied their photoconductivity from room temperature to 200°C. Secondly, we prepared CdS films with impurities of Cu, Ag, Au and AI. In doped films with Cu, Ag and Au, we found CdS peak shifts towards lower energies. Our aim was to use a new and initiative method' for temperature and impurities effects on CdS photoconductors.