THE EFFECTS OF IMPURITIES ON THE BAND GAP ENERGY OF CDS PHOTOCONDUCTORS

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SABETDARIANI R.; NEMATI A.

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Journal: Iranian Journal of Physics Research Year:2003 | Volume:3 | Issue:3 Page(s): 247-252

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Information Journal Paper

Title

THE EFFECTS OF IMPURITIES ON THE BAND GAP ENERGY OF CDS PHOTOCONDUCTORS

Author(s)

SABETDARIANI R. | NEMATI A. | Issue Writer Certificate

Keywords

GAP ENERGYQ4

CADMIUM SULFIDEQ4

IMPURITIESQ4

PHOTOCONDUCTIVITYQ4

Abstract

The basic requirements of the CdS thin films on their applications are high optical transparency, low electrical resistivity, and better crystalinity (e. g. high orientation). Firstly, we prepared CdS films by thermal evaporation techniques on glass substrate and then studied their PHOTOCONDUCTIVITY from room temperature to 200°C. Secondly, we prepared CdS films with IMPURITIES of Cu, Ag, Au and AI. In doped films with Cu, Ag and Au, we found CdS peak shifts towards lower energies. Our aim was to use a new and initiative method' for temperature and IMPURITIES effects on CdS photoconductors.

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APA: Copy

SABETDARIANI, R., & NEMATI, A.. (2003). THE EFFECTS OF IMPURITIES ON THE BAND GAP ENERGY OF CDS PHOTOCONDUCTORS. IRANIAN JOURNAL OF PHYSICS RESEARCH, 3(3), 247-252. SID. https://sid.ir/paper/1741/en

Vancouver: Copy

SABETDARIANI R., NEMATI A.. THE EFFECTS OF IMPURITIES ON THE BAND GAP ENERGY OF CDS PHOTOCONDUCTORS. IRANIAN JOURNAL OF PHYSICS RESEARCH[Internet]. 2003;3(3):247-252. Available from: https://sid.ir/paper/1741/en

IEEE: Copy

R. SABETDARIANI, and A. NEMATI, “THE EFFECTS OF IMPURITIES ON THE BAND GAP ENERGY OF CDS PHOTOCONDUCTORS,” IRANIAN JOURNAL OF PHYSICS RESEARCH, vol. 3, no. 3, pp. 247–252, 2003, [Online]. Available: https://sid.ir/paper/1741/en

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