Enhance hydrogen sulfide (H2S) gas sensor based on metal oxide semiconductor (NiO) thin films

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Aljarrah Radhiyah M.; RA. Nawar

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ISSN: 2588-4824

Journal Paper

Paper Information

Journal: Iranian Journal of Physics Research Year:2023 | Volume: | Issue: Page(s): 59-65

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Information Journal Paper

Title

Enhance hydrogen sulfide (H2S) gas sensor based on metal oxide semiconductor (NiO) thin films

Author(s)

Aljarrah Radhiyah M. | RA. Nawar | Issue Writer Certificate

Keywords

AFMQ4

gas sensorQ4

metal oxide semiconductorQ4

operating temperatureQ4

sensitivityQ4

Abstract

The morphological and structural properties of NiO films have been studied to find out the possibility of exploit (exploiting) it as a gas sensor. The thin film of the nickel oxide has been obtained by a chemical spray pyrolysis technique on glass substrates using various concentrations of nickel nitrate hexahydrate [Ni(NO3)2:6H2O] aqueous solution. The produced films were characterized using X-Ray diffraction and atomic force microscopy. The investigations revealed that the crystal structure are a cubic polycrystalline with preferential orientation along the (111) plane. The topographical analyse (AFM) shows that the values of the grain size increasing with increase the concentration, where average of the grain diameter raised from 42.04-110.058 nm of 0.01 M and 0.1M concentrations respectively. The gas sensing results demonstrate that sensitivity of nickel oxide semiconductor films to the hydrogen sulfide gas are affected by the size of the growing crystallites and the operating temperature.

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