Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension

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Rahimian Morteza

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Journal Paper

Paper Information

Journal: JOURNAL OF OPTOELECTRONICAL NANOSTRUCTURES Year:2023 | Volume:8 | Issue:1 Page(s): 13-31

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Information Journal Paper

Title

Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension

Author(s)

Rahimian Morteza | Issue Writer Certificate

Keywords

Junctionless tunneling field effect transistors (J-TFETs)

Band-toband tunneling (BTBT)

Ambipolar current

Depletion region

Tunneling barrier width

Abstract

Abstract:For the first time, in this research, we introduce ajunctionless tunneling FET (J-TFET) on a uniform p+starting junctionless FET to realize appreciable immunityagainst inherent high Ambipolar current (Iamb). So, weutilize two isolated gates with appropriate workfunctionsover the channel and drain regions to create P+IP+N+charge distribution. This structure utilizes a spacebetween the gate-drain electrodes (SGD), to provide aP+IP+N+ structure thanks to the effective electronsdepletion on the drain side. Increasing the SGD, furthereffectively pulls up the bands near the interface betweenthe channel-drain regions, widens the tunneling width fortunneling to occur, and thus in turn reduces the Iamb from5.37×10-7 A/µm to 1.14×10-14 A/µm. Thus, we point outthat the proposed J-TFET can obtain on-current thatsatisfies the expectation of logic applications with highperformance and Ioff that meets the specifications of lowpower characteristics, a phenomenon that is rarelyaccessible with conventional TFETs.

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