Optimization of infrared detector HgCdTe in photoconductive‏ ‏in the spectral region 2-6 µm‎ ‎

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Mahmoody Sh.; Akoundi M. S.; Shokri A. A.

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Journal Paper

Paper Information

Journal: Iranian Journal of Physics Research Year:2021 | Volume:21 | Issue:2 (پیاپی 84) Page(s): 401-407

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Information Journal Paper

Title

Optimization of infrared detector HgCdTe in photoconductive‏ ‏in the spectral region 2-6 µm‎ ‎

Author(s)

Mahmoody Sh. | Akoundi M. S. | Shokri A. A. | Issue Writer Certificate

Keywords

low band gap semiconductor

HgCdTe

photoconductive

infrared detector

Abstract

In this paper a new method in design and modeling of infrared detector HgCdTe in photoconductive mode ‎is presented. In this method after scrutiny mechanical, optical, electrical properties of semiconductor ‎HgCdTe and solving the photoconductive equations, software of equations is programmed and with initial ‎value and repeat cycle, their changes to key parameters such as thickness, wavelength and amount of ‎impurities are calculated and finally, performance of detector is optimized.‎ Modeling of photoconductive detector has been done in temperature of 300K and 2-6 µm wavelength range‎‎, according to obtained results, optimal specific detectivity is 3×109 cmHz1/2W-1‎‏ ‏in 5.77 µm wavelength.‎

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