EFFECT OF THE EXTRINSIC AND TEMPORAL CARRIERS ON RADIATIVE RECOMBINATION OF III-NITRIDE NANOSTRUCTURES

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ESMAEILI M.; HARATIZADEH H.; GHOLAMI M.; MONEMAR B.

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Journal: IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A- SCIENCE Year:2008 | Volume:32 | Issue:A3 Page(s): 207-213

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Title

EFFECT OF THE EXTRINSIC AND TEMPORAL CARRIERS ON RADIATIVE RECOMBINATION OF III-NITRIDE NANOSTRUCTURES

Author(s)

ESMAEILI M. | HARATIZADEH H. | GHOLAMI M. | MONEMAR B. | Issue Writer Certificate

Keywords

NANOSTRUCTURESQ3

PHOTOLUMINESCENCE (PL)Q3

GAN/ALGAN MULTI QUANTUM WELLQ3

TIME RESOLVED PL (TRPL)Q3

POLARIZATION FIELDSQ3

EXCITONQ3

III-NITRIDE SEMICONDUCTORSQ3

QUANTUM WELLQ3

Abstract

Due to many important applications, the group III-NITRIDE SEMICONDUCTORS have recently attracted remarkable attention among semiconductor researchers and engineers. In this paper, we report on the impact of extrinsic and temporal carriers on the screening of polarization internal fields. The optical efficiency of GaN/AlGaN multiple QUANTUM WELL (MQW) NANOSTRUCTURES were studied by means of photoluminescence (PL) and time-resolved PL measurements. Extrinsic carriers come from Si doping in the barriers, while temporal carriers originate when the samples are excited by laser beam. The emission peaks of MQWs in PL spectra of the undoped and low-doped samples show a shift towards higher energy levels as excitation intensity increases, while the other samples do not exhibit such a phenomenon due to the dominance of the extrinsic carriers. The transient data confirm the results of the PL measurements.

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APA: Copy

ESMAEILI, M., HARATIZADEH, H., GHOLAMI, M., & MONEMAR, B.. (2008). EFFECT OF THE EXTRINSIC AND TEMPORAL CARRIERS ON RADIATIVE RECOMBINATION OF III-NITRIDE NANOSTRUCTURES. IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A- SCIENCE, 32(A3), 207-213. SID. https://sid.ir/paper/117949/en

Vancouver: Copy

ESMAEILI M., HARATIZADEH H., GHOLAMI M., MONEMAR B.. EFFECT OF THE EXTRINSIC AND TEMPORAL CARRIERS ON RADIATIVE RECOMBINATION OF III-NITRIDE NANOSTRUCTURES. IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A- SCIENCE[Internet]. 2008;32(A3):207-213. Available from: https://sid.ir/paper/117949/en

IEEE: Copy

M. ESMAEILI, H. HARATIZADEH, M. GHOLAMI, and B. MONEMAR, “EFFECT OF THE EXTRINSIC AND TEMPORAL CARRIERS ON RADIATIVE RECOMBINATION OF III-NITRIDE NANOSTRUCTURES,” IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A- SCIENCE, vol. 32, no. A3, pp. 207–213, 2008, [Online]. Available: https://sid.ir/paper/117949/en

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