CONDUCTIVITY AND ELECTRICAL SURFACE DIFFERENCE STUDIES ON POLYCRYSTALLINE THIN FILMS CUINTE2 AND CUINSE2 WITH EXCESS INDIUM

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DASHTIANI M.

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Journal: IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING Year:2011 | Volume:- | Issue:11 Page(s): 87-95

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Title

CONDUCTIVITY AND ELECTRICAL SURFACE DIFFERENCE STUDIES ON POLYCRYSTALLINE THIN FILMS CUINTE2 AND CUINSE2 WITH EXCESS INDIUM

Author(s)

DASHTIANI M. | Issue Writer Certificate

Keywords

CUINTE2Q3

CUINSE2Q3

INDIUMQ3

CONDUCTIVITYQ3

HALL COEFFICIENTQ3

HALL MOBILITYQ3

Abstract

The Studies of the electrical properties for P-type thin films of CuInTe2 and CuInSe2 polycrystalline with the effect of excess INDIUM, Showed that CONDUCTIVITY and with the help of HALL COEFFICIENT RH and HALL MOBILITY mH for different temperature at various gate field. It indicated that in P-CuInTe2, the variation of RH has been increased with temperature to grain boundary which started from 170 k by increasing few percent INDIUM to the stoichiometric charge. The value of Hall Co-efficient in the range of 77-200 k remained constant. By increasing few percent INDIUM to P-CuInSe2, the values of RH above 150 k due to increase of grain boundary distance. In this paper, HALL MOBILITY values were studied.

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APA: Copy

DASHTIANI, M.. (2011). CONDUCTIVITY AND ELECTRICAL SURFACE DIFFERENCE STUDIES ON POLYCRYSTALLINE THIN FILMS CUINTE₂ AND CUINSE₂ WITH EXCESS INDIUM. IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING, -(11), 87-95. SID. https://sid.ir/paper/121006/en

Vancouver: Copy

DASHTIANI M.. CONDUCTIVITY AND ELECTRICAL SURFACE DIFFERENCE STUDIES ON POLYCRYSTALLINE THIN FILMS CUINTE₂ AND CUINSE₂ WITH EXCESS INDIUM. IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING[Internet]. 2011;-(11):87-95. Available from: https://sid.ir/paper/121006/en

IEEE: Copy

M. DASHTIANI, “CONDUCTIVITY AND ELECTRICAL SURFACE DIFFERENCE STUDIES ON POLYCRYSTALLINE THIN FILMS CUINTE₂ AND CUINSE₂ WITH EXCESS INDIUM,” IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING, vol. -, no. 11, pp. 87–95, 2011, [Online]. Available: https://sid.ir/paper/121006/en

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