A Feedforward Active Gate Voltage Control Method for SiC MOSFET Driving

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Ghorbani Hamidreza; Romeral Martinez Jose Luis

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Journal Paper

Paper Information

Journal: Journal of Applied Research in Electrical Engineering Year:621 | Volume: | Issue: Page(s): 87-94

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Information Journal Paper

Title

A Feedforward Active Gate Voltage Control Method for SiC MOSFET Driving

Author(s)

Ghorbani Hamidreza | Romeral Martinez Jose Luis | Issue Writer Certificate

Keywords

Active gate driver (AGD)Q4

SiC MOSFETQ4

Switching conditionQ4

Feedforward controlQ4

Abstract

A new active gate drive for Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed in this paper. The SiC MOSFET as an attractive replacement for insulated gate bipolar transistor (IGBT) has been regarded in many high power density converters. The proposed driver is based on a Feedforward control method. This simple analog gate driver (GD) improves switching transient with minimum undesirable effect on the efficiency. This paper involves the entire Switching condition (turn on/off), and the GD is applied to the SiC base technology of MOSFET. To evaluate the performance of the proposed GD, it will be compared with a conventional gate driver. The presented GD is validated by experimental tests. All the evaluations are carried out in a hard Switching condition and at high-frequency operation.

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