ANALYSIS OF EDM INSTABILITY WHEN MACHINING SILICON CARBIDE

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MAHDAVINEZHAD R.A.; ABD ELAH A.

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Journal: Year:2001 | Volume:34 | Issue:4 (70) Page(s): 105-120

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Title

ANALYSIS OF EDM INSTABILITY WHEN MACHINING SILICON CARBIDE

Author(s)

MAHDAVINEZHAD R.A. | ABD ELAH A. | Issue Writer Certificate

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Abstract

Carbides are new ceramic materials which are growingly used as substitute for metals in modern technology. Among these, . silicon carbides is more under attention. Machining of this material is very difficult due to its high hardness and resistance to wear. Among traditional methods, grinding is the most effective one. Nonetheless, specific and expensive wheels, limits on technology parameters and shapes and low machining rate are still problems. Electro-discharge machining is the best no conventional method but it shows high instability and tendency to arcing compared with machining of steels. This paper aims to investigate the causes and possible guidelines for instability reduction or elimination. When machining silicon carbide under different pulse-times and number of transistors, experimental results show that, arc discharges have the highest percentage of 60 among the other pulse types. Open circuit pulses have the least percentage of 20 and normal discharges .percentage is close to open circuit value. SEM pictures show existence of pure silicon on the machined surface which can cause instability due to its high electrical resistance. Heat generation within silicon carbide body especially near the discharge surface, may cause development of a thin dielectric vapor layer on the, surface which can be a reason for a large and fast growing plasma channel and as a result' are formation.

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APA: Copy

MAHDAVINEZHAD, R.A., & ABD ELAH, A.. (2001). ANALYSIS OF EDM INSTABILITY WHEN MACHINING SILICON CARBIDE. JOURNAL OF FACULTY OF ENGINEERING (UNIVERSITY OF TEHRAN), 34(4 (70)), 105-120. SID. https://sid.ir/paper/14286/en

Vancouver: Copy

MAHDAVINEZHAD R.A., ABD ELAH A.. ANALYSIS OF EDM INSTABILITY WHEN MACHINING SILICON CARBIDE. JOURNAL OF FACULTY OF ENGINEERING (UNIVERSITY OF TEHRAN)[Internet]. 2001;34(4 (70)):105-120. Available from: https://sid.ir/paper/14286/en

IEEE: Copy

R.A. MAHDAVINEZHAD, and A. ABD ELAH, “ANALYSIS OF EDM INSTABILITY WHEN MACHINING SILICON CARBIDE,” JOURNAL OF FACULTY OF ENGINEERING (UNIVERSITY OF TEHRAN), vol. 34, no. 4 (70), pp. 105–120, 2001, [Online]. Available: https://sid.ir/paper/14286/en

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