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Information Journal Paper

Title

HIGH TEMPERATURE SUPERCONDUCTORS AT OPTIMAL DOPING

Pages

  29-37

Abstract

 Intensive study of the HIGH TEMPERATURE SUPERCONDUCTORS has been ongoing for two decades. A great deal of this effort has been devoted to the underdoped regime, where the new and difficult physics of the doped MOTT INSULATOR has met   extra complications including bilayer coupling/splitting, shadow bands, and hot spots. While these complications continue to unfold, in this short overview the focus is moved to the region of actual high-Tc, that of OPTIMAL DOPING. The focus here also is not on the superconducting state itself, but primarily on the characteristics of the normal state from which the superconducting instability arises, and even these can be given only a broad-brush description. A reminder is given of two issues: (i) why the “optimal Tc” varies: for n-layered systems it increases for n up to 3, then decreases; for a given n, Tc increases according to the ‘basis’ atom in the order Bi, Tl, Hg; (ii) how does pressure, or a particular uniaxial strain, increase Tc when the zero-strain system is already optimally doped?

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    APA: Copy

    PICKETT, W.E.. (2006). HIGH TEMPERATURE SUPERCONDUCTORS AT OPTIMAL DOPING. IRANIAN JOURNAL OF PHYSICS RESEARCH, 6(3), 29-37. SID. https://sid.ir/paper/1492/en

    Vancouver: Copy

    PICKETT W.E.. HIGH TEMPERATURE SUPERCONDUCTORS AT OPTIMAL DOPING. IRANIAN JOURNAL OF PHYSICS RESEARCH[Internet]. 2006;6(3):29-37. Available from: https://sid.ir/paper/1492/en

    IEEE: Copy

    W.E. PICKETT, “HIGH TEMPERATURE SUPERCONDUCTORS AT OPTIMAL DOPING,” IRANIAN JOURNAL OF PHYSICS RESEARCH, vol. 6, no. 3, pp. 29–37, 2006, [Online]. Available: https://sid.ir/paper/1492/en

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