Study of Pristine and Ni-Doped ZnO Nanorods Synthesized by Pulse Laser Deposition

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Kamalianfar Ahmad

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Journal Paper

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Journal: Optoelectronic Year:2024 | Volume:7 | Issue:2 Page(s): 49-54

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Information Journal Paper

Title

Study of Pristine and Ni-Doped ZnO Nanorods Synthesized by Pulse Laser Deposition

Author(s)

Kamalianfar Ahmad | Issue Writer Certificate

Keywords

Optoelectric

Nanorods

Pulsed Laser Deposition

Ni-Doped ZnO

Abstract

In this work, pristine and Ni-Doped ZnO nanopods were deposited on silicon substrate by pulsed-laser deposition (PLD) machine. The morphogical, optical and electricl properties of Ni-Doped ZnO nanopod films were examined using various techniques. SEM images of the surface of the samples showed that the Nanorods grew in a randomly oriented manner on the substrate. The optical study conducted to investigate the transmittance (T), band gap (Eg) and photoluminace of Ni doped ZnO. An increase in the band gap from 3.18 to 3.26 electron volts, as well as an increase in light transmission, observed in the diagram of nickel-doped zinc oxide. Photoluminescence (PL) spectroscopy measurements carried out to study the defects in grown thin films. The spectrum exhibited two characteristic emission peaks around 410 and 482 nm, which may be due to oxygen vacancy. Additionally, defects such as oxygen vacancies are observable based on the peaks in the Raman spectrum. In the conductivity vs. temperature graph, for temperatures above 300 degrees Celsius, there is a significant increase in conductivity and charge carriers. The results indicate that Ni doping enhanced the optical charactteristics of the ZnO thin film and would be suitable candidates for Optoelectric applictions

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