مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Persian Verion

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

video

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

sound

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Persian Version

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

View:

573
مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Download:

136
مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Cites:

Information Journal Paper

Title

STUDY OF SYSTEM PRESSURE DEPENDENCE ON N-TIO2/P-SI HETROSTRUCTURE FOR PHOTOVOLTAIC APPLICATIONS

Pages

  41-45

Keywords

TIO2 NANOWIRESQ2

Abstract

 This study reports the fabrication of n-TiO2/p-Si HETROJUNCTION by deposition of TiO2 nanowires on p-Si substrate. The effect of SYSTEM PRESSURE and the current-voltage (I-V) characteristics of n-TiO2/p-si HETROJUNCTION were studied. The morphology of the samples was investigated by Field Emission Scanning Electron Microscopy (FESEM) which confirms formation of TiO2 nanowires that their diameters increase with increasing the pressure of system. The I-V CHARACTERISTICS were measured to investigate the HETROJUNCTION effects of under forward and reverse biases at different SYSTEM PRESSURE by sweeping in the voltage from 0 to+6 V, then to -6 V, and finally reaching 0 V. TiO2/Si diodes in the SYSTEM PRESSURE 60 mbar and 30 mbar indicated that a p-n junction formed in the n-TiO2/p-Si HETROJUNCTION. But as the SYSTEM PRESSURE increased to 1000 mbar, the I-V CHARACTERISTICS became inversed. This treatment can be scribed by the change of the energy band structure of TiO2.

Cites

  • No record.
  • References

  • No record.
  • Cite

    APA: Copy

    RAMEZANI SANI, S.. (2015). STUDY OF SYSTEM PRESSURE DEPENDENCE ON N-TIO2/P-SI HETROSTRUCTURE FOR PHOTOVOLTAIC APPLICATIONS. JOURNAL OF NANOSTRUCTURES, 5(1), 41-45. SID. https://sid.ir/paper/210946/en

    Vancouver: Copy

    RAMEZANI SANI S.. STUDY OF SYSTEM PRESSURE DEPENDENCE ON N-TIO2/P-SI HETROSTRUCTURE FOR PHOTOVOLTAIC APPLICATIONS. JOURNAL OF NANOSTRUCTURES[Internet]. 2015;5(1):41-45. Available from: https://sid.ir/paper/210946/en

    IEEE: Copy

    S. RAMEZANI SANI, “STUDY OF SYSTEM PRESSURE DEPENDENCE ON N-TIO2/P-SI HETROSTRUCTURE FOR PHOTOVOLTAIC APPLICATIONS,” JOURNAL OF NANOSTRUCTURES, vol. 5, no. 1, pp. 41–45, 2015, [Online]. Available: https://sid.ir/paper/210946/en

    Related Journal Papers

    Related Seminar Papers

  • No record.
  • Related Plans

  • No record.
  • Recommended Workshops






    Move to top
    telegram sharing button
    whatsapp sharing button
    linkedin sharing button
    twitter sharing button
    email sharing button
    email sharing button
    email sharing button
    sharethis sharing button