DESIGNING LOW NOISE AMPLIFIER BASED ON MODIFIED NOISE MATCHING TECHNIQUE

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ZAHEDI AMIR; AKBARI BOROMAND FARHAD; NAJAFI AGHDAM ESMAEIL

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Journal: ELECTRONIC INDUSTRIES Year:2016 | Volume:7 | Issue:2 Page(s): 71-78

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Information Journal Paper

Title

DESIGNING LOW NOISE AMPLIFIER BASED ON MODIFIED NOISE MATCHING TECHNIQUE

Author(s)

ZAHEDI AMIR | AKBARI BOROMAND FARHAD | NAJAFI AGHDAM ESMAEIL | Issue Writer Certificate

Keywords

LOW POWERQ2

POWER OPTIMIZATIONQ2

LOW VOLTAGEQ1

CMOS RFQ2

LOW NOISE AMPLIFIERQ2

Abstract

This paper examines the effects of operating point and device size on the high frequency noise parameters in CMOS technology, to eliminate high power dissipation challenge in simultaneous noise and input matching (SNIM) technique. Modified technique is applied to improve power dissipation problem, noise performance, gain and input/output matching of the LNA at center frequency of 5.2 GHz. The LNA is implemented in TSMC 0.18-µm CMOS process. Post-layout simulation results demonstrate LNA has reached to power consumption of 2.1 mW under 1.4 V supply while having, 2.71 dB noise figure, 1GHz Band-width, 16.38 dB power gain, -40.42 dB reverse isolation factor, -21.5 dB and -23.59 dB input/output return loss respectively.

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APA: Copy

ZAHEDI, AMIR, AKBARI BOROMAND, FARHAD, & NAJAFI AGHDAM, ESMAEIL. (2016). DESIGNING LOW NOISE AMPLIFIER BASED ON MODIFIED NOISE MATCHING TECHNIQUE. ELECTRONIC INDUSTRIES, 7(2), 71-78. SID. https://sid.ir/paper/229687/en

Vancouver: Copy

ZAHEDI AMIR, AKBARI BOROMAND FARHAD, NAJAFI AGHDAM ESMAEIL. DESIGNING LOW NOISE AMPLIFIER BASED ON MODIFIED NOISE MATCHING TECHNIQUE. ELECTRONIC INDUSTRIES[Internet]. 2016;7(2):71-78. Available from: https://sid.ir/paper/229687/en

IEEE: Copy

AMIR ZAHEDI, FARHAD AKBARI BOROMAND, and ESMAEIL NAJAFI AGHDAM, “DESIGNING LOW NOISE AMPLIFIER BASED ON MODIFIED NOISE MATCHING TECHNIQUE,” ELECTRONIC INDUSTRIES, vol. 7, no. 2, pp. 71–78, 2016, [Online]. Available: https://sid.ir/paper/229687/en

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