Nonlinear current-voltage characteristic of a 2π domain wall in 𝒑-type magnetic semiconductor nanowires

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FALLAHI VAHID; ABDI REZA; Aghbolaghi Reza

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Journal: JOURNAL OF RESEARCH ON MANY BODY SYSTEMS Year:2017 | Volume:7 | Issue:13 Page(s): 165-173

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Information Journal Paper

Title

Nonlinear current-voltage characteristic of a 2π domain wall in 𝒑-type magnetic semiconductor nanowires

Author(s)

FALLAHI VAHID | ABDI REZA | Aghbolaghi Reza | Issue Writer Certificate

Keywords

Ferromagnetic nanowireQ1

Domain wallQ1

Current-voltage characteristicQ1

Spin polarizationQ1

Abstract

In this paper, the Current-voltage characteristic of a 2π Domain wall formed between two semiconducting magnetic nanowires of 𝑝-type material with very high Spin polarization at a given temperature 𝑇 has been investigated. In this regard, the transmission and reflection probabilities of the carriers from the 2π wall have been obtained by solving the coupled Schrö dinger equations for the up and the down spin components of the wave function, and accordingly then the charge and spin current density has been calculated. In the study of spin-diode behavior of the Domain wall, it has been shown that the threshold voltage of the diode increases with the Domain wall width. Also, the nonlinear dependence of the Spin polarization on the applied voltage has been determined for a spin transistor application.

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APA: Copy

FALLAHI, VAHID, ABDI, REZA, & Aghbolaghi, Reza. (2017). Nonlinear current-voltage characteristic of a 2π domain wall in 𝒑-type magnetic semiconductor nanowires. JOURNAL OF RESEARCH ON MANY BODY SYSTEMS, 7(13 ), 165-173. SID. https://sid.ir/paper/243772/en

Vancouver: Copy

FALLAHI VAHID, ABDI REZA, Aghbolaghi Reza. Nonlinear current-voltage characteristic of a 2π domain wall in 𝒑-type magnetic semiconductor nanowires. JOURNAL OF RESEARCH ON MANY BODY SYSTEMS[Internet]. 2017;7(13 ):165-173. Available from: https://sid.ir/paper/243772/en

IEEE: Copy

VAHID FALLAHI, REZA ABDI, and Reza Aghbolaghi, “Nonlinear current-voltage characteristic of a 2π domain wall in 𝒑-type magnetic semiconductor nanowires,” JOURNAL OF RESEARCH ON MANY BODY SYSTEMS, vol. 7, no. 13 , pp. 165–173, 2017, [Online]. Available: https://sid.ir/paper/243772/en

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