OPTICAL & ELECTRICAL INVESTIGATION OF N-AL CO-DOPED ZINC OXIDE FABRICATED BY CONTROLLED SOL-GEL METHOD

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BAGHERI N.; MAJLES ARA M.H.

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Journal: NANOSCALE Year:2015 | Volume:2 | Issue:2 Page(s): 81-86

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Title

OPTICAL & ELECTRICAL INVESTIGATION OF N-AL CO-DOPED ZINC OXIDE FABRICATED BY CONTROLLED SOL-GEL METHOD

Author(s)

BAGHERI N. | MAJLES ARA M.H. | Issue Writer Certificate

Keywords

P-TYPE ZINC OXIDEQ2

SOL-GELQ1

PHOTOLUMINESCENCEQ1

ELECTRICAL PROPERTIESQ2

Abstract

In this study, we achieved to high carrier concentration (in order 1019) p-type ZnO by using N-Al co-doping. By controlling the surfactant concentration, the temperature of annealing reduced to 450oC without deterioration of ELECTRICAL PROPERTIES. To investigate the effect of doping, the optical and ELECTRICAL PROPERTIES of co-doped ZnO characteristics were compared with undoped ZnO thin film fabricated by the same method. The PL-spectra results indicate most intrinsic defects that mainly generate electron carriers, were removed by codoping. The UV-visible spectra show both films have high transmittance in visible region (over 95%), visible transmission increased by N-Al codoping. The electrical analysis results, confirm the conversion from n-type to p-type ZnO, Which is in agreement with the optical results of PHOTOLUMINESCENCE spectra.

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APA: Copy

BAGHERI, N., & MAJLES ARA, M.H.. (2015). OPTICAL & ELECTRICAL INVESTIGATION OF N-AL CO-DOPED ZINC OXIDE FABRICATED BY CONTROLLED SOL-GEL METHOD. NANOSCALE, 2(2), 81-86. SID. https://sid.ir/paper/256974/en

Vancouver: Copy

BAGHERI N., MAJLES ARA M.H.. OPTICAL & ELECTRICAL INVESTIGATION OF N-AL CO-DOPED ZINC OXIDE FABRICATED BY CONTROLLED SOL-GEL METHOD. NANOSCALE[Internet]. 2015;2(2):81-86. Available from: https://sid.ir/paper/256974/en

IEEE: Copy

N. BAGHERI, and M.H. MAJLES ARA, “OPTICAL & ELECTRICAL INVESTIGATION OF N-AL CO-DOPED ZINC OXIDE FABRICATED BY CONTROLLED SOL-GEL METHOD,” NANOSCALE, vol. 2, no. 2, pp. 81–86, 2015, [Online]. Available: https://sid.ir/paper/256974/en

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