A 1 V UWB LNA WITH EXCELLENT GROUP DELAY VARIATION

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HAZERI A.R.

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Journal Paper

Paper Information

Journal: IRANIAN JOURNAL OF ELECTRICAL AND COMPUTER ENGINEERING (IJECE) Year:2012 | Volume:11 | Issue:2 Page(s): 120-123

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Title

A 1 V UWB LNA WITH EXCELLENT GROUP DELAY VARIATION

Author(s)

HAZERI A.R. | Issue Writer Certificate

Keywords

CMOS

LOW POWER

LOW VOLTAGE

THRESHOLD VOLTAGE

UWB LNA

Abstract

In this paper, a 1 V UWB LNA in TSMC 0.13 um CMOS process technology is designed. The power consumption is only 7.6 mW. By employing RLC peaking, high-frequency poles are moved outside of the 3.1-10.6 GHz band of interest, and a flat power gain and an excellent phase linearity are achieved. By applying DC voltage to the bulk of transistors, a low voltage LNA is accomplished. The proposed LNA is consisted of two stages and uses only 2 inductors. The proposed LNA has the power gain of 8.7 ~ 10.3, low NF of 3.5 ~ 4.2 dB, IIP3 of -6 dB, and good input return loss greater than -17 dB. The -3 dB bandwidth of S21 is from 0.6 to 13 GHz.

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APA: Copy

HAZERI, A.R.. (2012). A 1 V UWB LNA WITH EXCELLENT GROUP DELAY VARIATION. IRANIAN JOURNAL OF ELECTRICAL AND COMPUTER ENGINEERING (IJECE), 11(2), 120-123. SID. https://sid.ir/paper/283520/en

Vancouver: Copy

HAZERI A.R.. A 1 V UWB LNA WITH EXCELLENT GROUP DELAY VARIATION. IRANIAN JOURNAL OF ELECTRICAL AND COMPUTER ENGINEERING (IJECE)[Internet]. 2012;11(2):120-123. Available from: https://sid.ir/paper/283520/en

IEEE: Copy

A.R. HAZERI, “A 1 V UWB LNA WITH EXCELLENT GROUP DELAY VARIATION,” IRANIAN JOURNAL OF ELECTRICAL AND COMPUTER ENGINEERING (IJECE), vol. 11, no. 2, pp. 120–123, 2012, [Online]. Available: https://sid.ir/paper/283520/en

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