DESIGN OPTIMIZATION FOR 4.1-THZ QUANTUM CASCADE LASERS

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ESMAILIFARD F.; MORAVVEJ FARSHI M.K.; SAGHAFI K.

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Journal Paper

Paper Information

Journal: IRANIAN JOURNAL OF ELECTRICAL AND ELECTRONIC ENGINEERING Year:2011 | Volume:7 | Issue:1 Page(s): 28-32

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Information Journal Paper

Title

DESIGN OPTIMIZATION FOR 4.1-THZ QUANTUM CASCADE LASERS

Author(s)

ESMAILIFARD F. | MORAVVEJ FARSHI M.K. | SAGHAFI K. | Issue Writer Certificate

Keywords

QUANTUM CASCADE LASER

RESONANT TUNNELING TRANSPORT

PARASITIC CURRENT CHANNEL

Abstract

We present an optimized design for GaAs/AlGaAs QUANTUM CASCADE LASERs operating at 4.1THz. This was based on a three-well active module with diagonal radiative transition. This was performed by modifying the existing model structure, to reduce the parasitic anticrossings (leakage currents) as well as the optical gain linewidth. While the gain FWHM was reduced by more than 50% the gain peak was increased by about 23.3%.

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APA: Copy

ESMAILIFARD, F., MORAVVEJ FARSHI, M.K., & SAGHAFI, K.. (2011). DESIGN OPTIMIZATION FOR 4.1-THZ QUANTUM CASCADE LASERS. IRANIAN JOURNAL OF ELECTRICAL AND ELECTRONIC ENGINEERING, 7(1), 28-32. SID. https://sid.ir/paper/299796/en

Vancouver: Copy

ESMAILIFARD F., MORAVVEJ FARSHI M.K., SAGHAFI K.. DESIGN OPTIMIZATION FOR 4.1-THZ QUANTUM CASCADE LASERS. IRANIAN JOURNAL OF ELECTRICAL AND ELECTRONIC ENGINEERING[Internet]. 2011;7(1):28-32. Available from: https://sid.ir/paper/299796/en

IEEE: Copy

F. ESMAILIFARD, M.K. MORAVVEJ FARSHI, and K. SAGHAFI, “DESIGN OPTIMIZATION FOR 4.1-THZ QUANTUM CASCADE LASERS,” IRANIAN JOURNAL OF ELECTRICAL AND ELECTRONIC ENGINEERING, vol. 7, no. 1, pp. 28–32, 2011, [Online]. Available: https://sid.ir/paper/299796/en

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