مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

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Information Journal Paper

Title

Modelling of High Quantum Efficiency Avalanche Photodiode

Pages

  509-515

Abstract

 model of a low noise high Quantum Efficiency n+np Germanium Photodiode utilizing ion implantation technique and subsequent drive-in diffusion in the n layer is presented. Numerical analysis is used to study the influence of junction depth and bulk concentration on the electric field profile and Quantum Efficiency. The performance of the device is theoretically treated especially at the wave-length region 1. 55μ m where the Silica optical fiber has minimum attenuation loss. It has been found that at this wave-length and for the optimum device design the Quantum Efficiency approaches about 90%.

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    APA: Copy

    Baldawi, T., & Abuelhaija, A.. (2019). Modelling of High Quantum Efficiency Avalanche Photodiode. IRANIAN JOURNAL OF ELECTRICAL AND ELECTRONIC ENGINEERING, 15(4), 509-515. SID. https://sid.ir/paper/300027/en

    Vancouver: Copy

    Baldawi T., Abuelhaija A.. Modelling of High Quantum Efficiency Avalanche Photodiode. IRANIAN JOURNAL OF ELECTRICAL AND ELECTRONIC ENGINEERING[Internet]. 2019;15(4):509-515. Available from: https://sid.ir/paper/300027/en

    IEEE: Copy

    T. Baldawi, and A. Abuelhaija, “Modelling of High Quantum Efficiency Avalanche Photodiode,” IRANIAN JOURNAL OF ELECTRICAL AND ELECTRONIC ENGINEERING, vol. 15, no. 4, pp. 509–515, 2019, [Online]. Available: https://sid.ir/paper/300027/en

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