Employing constant photocurrent method for the study of defects in silicon thin films

Q: How can I download an article?

To download an article from SID, first log in to the site, search for the article title, and click on the 'Download Article' option.

Q: How can I download an ISI article?

To download an ISI article on SID, enter the keyword or article title in the search bar, view the relevant results, click on the desired article, and select the 'Download Article' option.

Q: How can I access the SID database?

To access the SID database, visit SID.ir, create an account, and log in to access scientific resources.

Q: Is downloading articles from SID free?

Some articles on SID are available for free, while others require payment. Details are specified on the article's page.

MALIK HITENDRA K.; Juneja Sucheta; KUMAR SUSHIL

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Journal Paper

Paper Information

Journal: JOURNAL OF THEORETICAL AND APPLIED PHYSICS (IRANIAN PHYSICAL JOURNAL) Year:2019 | Volume:13 | Issue:2 Page(s): 107-113

Download Full-Text

View:

198

Download:

173

Cites:

Information Journal Paper

Title

Employing constant photocurrent method for the study of defects in silicon thin films

Author(s)

MALIK HITENDRA K. | Juneja Sucheta | KUMAR SUSHIL | Issue Writer Certificate

Keywords

Microcrystalline silicon thin films

Constant photocurrent method

PECVD

Optical absorption coefficient

Density of states

Abstract

Different optical characterization techniques have been performed on a series of Microcrystalline silicon thin films deposited using very high-frequency-assisted plasma-enhanced chemical vapor deposition process. The Constant photocurrent method has been employed to study the defects states in Density of states spectra of hydrogenated Microcrystalline silicon thin films. The photocurrent measurements demonstrate anisotropy in the optoelectronic properties of the material. We have analyzed the Optical absorption coefficient from UV spectroscopy and with the help of Constant photocurrent method. The spectra have been analyzed in broad region and are presented for both the cases, i. e., surface and bulk light scatterings. The spectra were interpreted in terms of disorder, resulting defect density, crystalline/amorphous volume fractions and material morphology. The subgap-related parameters such as absorption coefficient, characteristic energy E0 of tail states and density of subgap defect states together with an estimate of the bandgap of silicon films prepared at various crystalline fractions have also been estimated. The density of localized tail states is found to fall exponentially toward the gap with band tail width of about 110 meV.

Cites

No record.

References

No record.

Cite

APA: Copy

MALIK, HITENDRA K., Juneja, Sucheta, & KUMAR, SUSHIL. (2019). Employing constant photocurrent method for the study of defects in silicon thin films. JOURNAL OF THEORETICAL AND APPLIED PHYSICS (IRANIAN PHYSICAL JOURNAL), 13(2), 107-113. SID. https://sid.ir/paper/318997/en

Vancouver: Copy

MALIK HITENDRA K., Juneja Sucheta, KUMAR SUSHIL. Employing constant photocurrent method for the study of defects in silicon thin films. JOURNAL OF THEORETICAL AND APPLIED PHYSICS (IRANIAN PHYSICAL JOURNAL)[Internet]. 2019;13(2):107-113. Available from: https://sid.ir/paper/318997/en

IEEE: Copy

HITENDRA K. MALIK, Sucheta Juneja, and SUSHIL KUMAR, “Employing constant photocurrent method for the study of defects in silicon thin films,” JOURNAL OF THEORETICAL AND APPLIED PHYSICS (IRANIAN PHYSICAL JOURNAL), vol. 13, no. 2, pp. 107–113, 2019, [Online]. Available: https://sid.ir/paper/318997/en

Related Journal Papers

No record.

Related Seminar Papers

No record.

Related Plans

No record.

Recommended Workshops