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Information Journal Paper

Title

ROOM TEMPERATURE PHOTO-INDUCED, EU3+-DOPED IGZO TRANSPARENT THIN FILMS FABRICATED USING SOL–GEL METHOD

Pages

  0-0

Abstract

 Red-emitting Eu3+-doped indium gallium zinc oxide (IGZO) transparent thin films were fabricated using sol–gel method under UV (254-nm irradiation) in nitrogen atmosphere (inside the glove box) and thermally annealed at 500oC for 1 h. Structure, morphology, composition, and optical properties of the materials were examined using X-ray diffraction analysis, scanning electron microscope, X-ray PHOTOELECTRON SPECTROSCOPY, and photoluminescence, respectively.

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  • Cite

    APA: Copy

    KRISHNAN, RAJAGOPALAN, THIRUMALAI, JAGANNATHAN, & CHANDRAMOHAN, RATHINAM. (2013). ROOM TEMPERATURE PHOTO-INDUCED, EU3+-DOPED IGZO TRANSPARENT THIN FILMS FABRICATED USING SOL–GEL METHOD. JOURNAL OF NANOSTRUCTURE IN CHEMISTRY, 3(3), 0-0. SID. https://sid.ir/paper/333144/en

    Vancouver: Copy

    KRISHNAN RAJAGOPALAN, THIRUMALAI JAGANNATHAN, CHANDRAMOHAN RATHINAM. ROOM TEMPERATURE PHOTO-INDUCED, EU3+-DOPED IGZO TRANSPARENT THIN FILMS FABRICATED USING SOL–GEL METHOD. JOURNAL OF NANOSTRUCTURE IN CHEMISTRY[Internet]. 2013;3(3):0-0. Available from: https://sid.ir/paper/333144/en

    IEEE: Copy

    RAJAGOPALAN KRISHNAN, JAGANNATHAN THIRUMALAI, and RATHINAM CHANDRAMOHAN, “ROOM TEMPERATURE PHOTO-INDUCED, EU3+-DOPED IGZO TRANSPARENT THIN FILMS FABRICATED USING SOL–GEL METHOD,” JOURNAL OF NANOSTRUCTURE IN CHEMISTRY, vol. 3, no. 3, pp. 0–0, 2013, [Online]. Available: https://sid.ir/paper/333144/en

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