مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

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Information Journal Paper

Title

ENERGY BAND CORRECTION DUE TO ONE DIMENSION TENSION IN PHOSPHORENE

Pages

  59-67

Abstract

 Among graphene-like family, phosphorene is a typical semiconducting layered material, which can also be a superconductor in low temperature. Applying pressure or tension on phosphorene lattice results in changing the hopping terms, which change the energy bands of the material. In this research we use the tight-binding Hamiltonian, including relevant hopping terms, to calculate energy bands of normal and under tension phosphorene. Our results show that the energy gap decreases by decreasing 𝒕𝟐/𝒕𝟏from 3 to 2, and finally the gap disappears.

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    APA: Copy

    IZADPARAST, ALI, & SAHEBSARA, PEYMAN. (2016). ENERGY BAND CORRECTION DUE TO ONE DIMENSION TENSION IN PHOSPHORENE. JOURNAL OF OPTOELECTRONICAL NANOSTRUCTURES, 1(4), 59-67. SID. https://sid.ir/paper/349310/en

    Vancouver: Copy

    IZADPARAST ALI, SAHEBSARA PEYMAN. ENERGY BAND CORRECTION DUE TO ONE DIMENSION TENSION IN PHOSPHORENE. JOURNAL OF OPTOELECTRONICAL NANOSTRUCTURES[Internet]. 2016;1(4):59-67. Available from: https://sid.ir/paper/349310/en

    IEEE: Copy

    ALI IZADPARAST, and PEYMAN SAHEBSARA, “ENERGY BAND CORRECTION DUE TO ONE DIMENSION TENSION IN PHOSPHORENE,” JOURNAL OF OPTOELECTRONICAL NANOSTRUCTURES, vol. 1, no. 4, pp. 59–67, 2016, [Online]. Available: https://sid.ir/paper/349310/en

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