مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

video

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

sound

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Persian Version

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

View:

208
مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Download:

76
مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Cites:

Information Journal Paper

Title

Design and Simulation of a Highly Efficient InGaN/Si Double-Junction Solar Cell

Pages

  157-162

Abstract

 A solar cell is an electronic device which not only harvests photovoltaic effect but also transforms light energy into electricity. In photovoltaic phenomenon, a P-N junction is created to form an empty region. The presented paper aims at proposing a new highly efficient InGaN/Si double-junction solar cell structure. This cell is designed to be used in a real environmental situation, so only structural parameters are optimized. In the present structure, a thin layer of Cd-S is used as the anti-reflector window layer. The cell is simulated using ATLAS-SILVACO software and its maximum efficiency is computed to be 37. 23%. Considering the supposed structure, the findings show that the efficiency of this solar cell, which is 37. 32%, is so far the highest reported efficiency amongst all solar cells.

Multimedia

  • No record.
  • Cites

  • No record.
  • References

  • No record.
  • Cite

    APA: Copy

    Ahmadi, Seyed Milad, & Parandin, Fariborz. (2017). Design and Simulation of a Highly Efficient InGaN/Si Double-Junction Solar Cell. JOURNAL OF ELECTRICAL AND COMPUTER ENGINEERING INNOVATIONS, 5(2), 157-162. SID. https://sid.ir/paper/350067/en

    Vancouver: Copy

    Ahmadi Seyed Milad, Parandin Fariborz. Design and Simulation of a Highly Efficient InGaN/Si Double-Junction Solar Cell. JOURNAL OF ELECTRICAL AND COMPUTER ENGINEERING INNOVATIONS[Internet]. 2017;5(2):157-162. Available from: https://sid.ir/paper/350067/en

    IEEE: Copy

    Seyed Milad Ahmadi, and Fariborz Parandin, “Design and Simulation of a Highly Efficient InGaN/Si Double-Junction Solar Cell,” JOURNAL OF ELECTRICAL AND COMPUTER ENGINEERING INNOVATIONS, vol. 5, no. 2, pp. 157–162, 2017, [Online]. Available: https://sid.ir/paper/350067/en

    Related Journal Papers

  • No record.
  • Related Seminar Papers

  • No record.
  • Related Plans

  • No record.
  • Recommended Workshops






    Move to top
    telegram sharing button
    whatsapp sharing button
    linkedin sharing button
    twitter sharing button
    email sharing button
    email sharing button
    email sharing button
    sharethis sharing button