SIMULATION OF DOPING TYPE AND CURRENT DENSITY EFFECTS ON POROUS SILICON GROWTH BY MODIFIED LIMITED DIFFUSION AGGREGATION METHOD

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MINAEIFARD SAKINEH; SABETDARIANI R.

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Journal: IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING Year:2010 | Volume:- | Issue:8 Page(s): 67-59

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Title

SIMULATION OF DOPING TYPE AND CURRENT DENSITY EFFECTS ON POROUS SILICON GROWTH BY MODIFIED LIMITED DIFFUSION AGGREGATION METHOD

Author(s)

MINAEIFARD SAKINEH | SABETDARIANI R. | Issue Writer Certificate

Keywords

POROUS SILICONQ4

LIMITED DIFFUSION AGGREGATIONQ4

SIMULATIONQ2

STICKING COEFFICIENTQ4

MEAN FIELDQ4

Abstract

In this paper we improve the LIMITED DIFFUSION AGGREGATION model to study and simulate effects of doping type and current density on the structure of POROUS SILICON.For doping type effects, STICKING COEFFICIENT and for current density effect, a MEAN FIELD parameter was applied to the LIMITED DIFFUSION AGGREGATION model. The results of our SIMULATION show that STICKING COEFFICIENT influences pore thickness, while MEAN FIELD parameter controls the tree or rod characteristic, of pores. These theoretical findings are in agreement with experimental observations.

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APA: Copy

MINAEIFARD, SAKINEH, & SABETDARIANI, R.. (2010). SIMULATION OF DOPING TYPE AND CURRENT DENSITY EFFECTS ON POROUS SILICON GROWTH BY MODIFIED LIMITED DIFFUSION AGGREGATION METHOD. IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING, -(8), 67-59. SID. https://sid.ir/paper/358983/en

Vancouver: Copy

MINAEIFARD SAKINEH, SABETDARIANI R.. SIMULATION OF DOPING TYPE AND CURRENT DENSITY EFFECTS ON POROUS SILICON GROWTH BY MODIFIED LIMITED DIFFUSION AGGREGATION METHOD. IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING[Internet]. 2010;-(8):67-59. Available from: https://sid.ir/paper/358983/en

IEEE: Copy

SAKINEH MINAEIFARD, and R. SABETDARIANI, “SIMULATION OF DOPING TYPE AND CURRENT DENSITY EFFECTS ON POROUS SILICON GROWTH BY MODIFIED LIMITED DIFFUSION AGGREGATION METHOD,” IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING, vol. -, no. 8, pp. 67–59, 2010, [Online]. Available: https://sid.ir/paper/358983/en

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