A new tunneling carbon nanotube field effect transistor with linear doping profile at drain region: numerical simulation study

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Abdi Tahneh Behrooz; NADERI ALI

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Journal: Modeling in Engineering Year:2018 | Volume:16 | Issue:52 Page(s): 109-117

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Title

A new tunneling carbon nanotube field effect transistor with linear doping profile at drain region: numerical simulation study

Author(s)

Abdi Tahneh Behrooz | NADERI ALI | Issue Writer Certificate

Keywords

TunnelingQ1

LDQ1

TQ1

CNTFETQ1

Quantum simulationQ1

NEGFQ1

Power consumptionQ1

Cutoff frequencyQ1

Abstract

For the first time, a new structure is proposed for Tunneling CNTFET (T-CNTFET). In this new structure, the drain region is divided into two parts, and the part near the channel has a linear doping profile. This new structure is called T-CNTFET with linear doping in drain (LD-T-CNTFET). The obtained results using a non-equilibrium Green? s function (NEGF) method show that the LD-T-CNTFET compared with conventional T-CNTFET leads to increase in ON current, reduction in OFF current, increasing current ratio, reducing sub-threshoLD swing, reducing Power consumption and increasing the transistor speed. In addition to the mentioned benefits, the LD-T-CNTFET structure increases the Cutoff frequency in comparison with conventional T-CNTFET structure. Therefore, it can be said that LD-T-CNTFET is a proper structure for the applications with low Power consumption and high speed.

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APA: Copy

Abdi Tahneh, Behrooz, & NADERI, ALI. (2018). A new tunneling carbon nanotube field effect transistor with linear doping profile at drain region: numerical simulation study. JOURNAL OF MODELING IN ENGINEERING, 16(52 ), 109-117. SID. https://sid.ir/paper/359404/en

Vancouver: Copy

Abdi Tahneh Behrooz, NADERI ALI. A new tunneling carbon nanotube field effect transistor with linear doping profile at drain region: numerical simulation study. JOURNAL OF MODELING IN ENGINEERING[Internet]. 2018;16(52 ):109-117. Available from: https://sid.ir/paper/359404/en

IEEE: Copy

Behrooz Abdi Tahneh, and ALI NADERI, “A new tunneling carbon nanotube field effect transistor with linear doping profile at drain region: numerical simulation study,” JOURNAL OF MODELING IN ENGINEERING, vol. 16, no. 52 , pp. 109–117, 2018, [Online]. Available: https://sid.ir/paper/359404/en

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