A new technique for reducing self heating effect in MOSFETs with extended source and drain

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ZAREIEE MEYSAM; Mehrad Mahsa

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Journal: Modeling in Engineering Year:2018 | Volume:16 | Issue:53 Page(s): 149-155

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Title

A new technique for reducing self heating effect in MOSFETs with extended source and drain

Author(s)

ZAREIEE MEYSAM | Mehrad Mahsa | Issue Writer Certificate

Keywords

Double gate MOSFETQ1

Silicon on InsulatorQ1

Buried OxideQ1

Maximum TempratureQ1

Abstract

Metal Oxide Semiconductor Field Effect Transistor (MOSFET) plays a key role in electronic industry in recent years. Among MOSFETs, double gate (DG) transistor is an important device. During last decade, many efforts have been accomplished to improve the device properties. A new structure of the double gate (DG) transistor on SOI technology is proposed in this paper. In SOI technology, Buried Oxide as insulating layer has lower thermal conductivity than silicon and makes some problems for nano-scale MOSFETs. Incorporating a silicon window under the channel region and two spacers reduces maximum temperature of device. The simulation with ATLAS simulator shows that by optimizing the length and thickness of the silicon window, an acceptable device temperature would be achieved and makes the double gate structure more reliable for nano-scale applications at high temperature. Drain current, lattice temperature, electron mobility, hole density, threshold voltage, subthreshold swing and off current are improved in the new structure.

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APA: Copy

ZAREIEE, MEYSAM, & Mehrad, Mahsa. (2018). A new technique for reducing self heating effect in MOSFETs with extended source and drain. JOURNAL OF MODELING IN ENGINEERING, 16(53 ), 149-155. SID. https://sid.ir/paper/359425/en

Vancouver: Copy

ZAREIEE MEYSAM, Mehrad Mahsa. A new technique for reducing self heating effect in MOSFETs with extended source and drain. JOURNAL OF MODELING IN ENGINEERING[Internet]. 2018;16(53 ):149-155. Available from: https://sid.ir/paper/359425/en

IEEE: Copy

MEYSAM ZAREIEE, and Mahsa Mehrad, “A new technique for reducing self heating effect in MOSFETs with extended source and drain,” JOURNAL OF MODELING IN ENGINEERING, vol. 16, no. 53 , pp. 149–155, 2018, [Online]. Available: https://sid.ir/paper/359425/en

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