DESIGN AND SIMULATION OF A MULTILAYER SOI-MOSFET STRUCTURE FOR IMPROVING SELF-HEATING EFFECTS

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OROUJI A.A.; HEYDARI S.

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Journal: Modeling in Engineering Year:2011 | Volume:8 | Issue:23 Page(s): 19-24

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Information Journal Paper

Title

DESIGN AND SIMULATION OF A MULTILAYER SOI-MOSFET STRUCTURE FOR IMPROVING SELF-HEATING EFFECTS

Author(s)

OROUJI A.A. | HEYDARI S. | Issue Writer Certificate

Keywords

FIELD EFFECT TRANSISTORQ2

SILICON ON INSULATORQ2

SELF-HEATING EFFECTQ3

Abstract

In this paper, a new silicon-on-insulator (SOI) device structure is proposed to reduce SELF-HEATING EFFECTs. Using Si3N4 material is main idea in the structure that has high thermal conductivity respect to silicon dioxide. The device has been verified in two-dimensional device simulation. The results show that the structure provides a new path to reduce the temperature of the channel of SOI Metal-Oxide-Semiconductor FIELD EFFECT TRANSISTOR (MOSFET) and decreases the temperature in the channel.

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APA: Copy

OROUJI, A.A., & HEYDARI, S.. (2011). DESIGN AND SIMULATION OF A MULTILAYER SOI-MOSFET STRUCTURE FOR IMPROVING SELF-HEATING EFFECTS. JOURNAL OF MODELING IN ENGINEERING, 8(23), 19-24. SID. https://sid.ir/paper/173703/en

Vancouver: Copy

OROUJI A.A., HEYDARI S.. DESIGN AND SIMULATION OF A MULTILAYER SOI-MOSFET STRUCTURE FOR IMPROVING SELF-HEATING EFFECTS. JOURNAL OF MODELING IN ENGINEERING[Internet]. 2011;8(23):19-24. Available from: https://sid.ir/paper/173703/en

IEEE: Copy

A.A. OROUJI, and S. HEYDARI, “DESIGN AND SIMULATION OF A MULTILAYER SOI-MOSFET STRUCTURE FOR IMPROVING SELF-HEATING EFFECTS,” JOURNAL OF MODELING IN ENGINEERING, vol. 8, no. 23, pp. 19–24, 2011, [Online]. Available: https://sid.ir/paper/173703/en

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