Improvement of electrical and opt ical properties of thin ITO films by modifying electrode spacing in DC magnetron sputtering

Q: How can I download an article?

To download an article from SID, first log in to the site, search for the article title, and click on the 'Download Article' option.

Q: How can I download an ISI article?

To download an ISI article on SID, enter the keyword or article title in the search bar, view the relevant results, click on the desired article, and select the 'Download Article' option.

Q: How can I access the SID database?

To access the SID database, visit SID.ir, create an account, and log in to access scientific resources.

Q: Is downloading articles from SID free?

Some articles on SID are available for free, while others require payment. Details are specified on the article's page.

Kosarian Abdolnabi; Keramatzadeh Alireza; SHAKIBA MARYAM; Kaabi Hooman; FARSHIDI EBRAHIM

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Journal Paper

Paper Information

Journal: TABRIZ JOURNAL OF ELECTRICAL ENGINEERING Year:2020 | Volume:50 | Issue:1 (91) Page(s): 351-359

Download Full-Text

Persian Verion

View:

438

Download:

Cites:

Information Journal Paper

Title

Improvement of electrical and opt ical properties of thin ITO films by modifying electrode spacing in DC magnetron sputtering

Author(s)

Keywords

ITO thin filmsQ1

DC magnetron sputteringQ1

electrode spacingQ1

sheet resistanceQ1

transmittanceQ1

electrical and optical propertiesQ1

Abstract

An important parameter in the deposition of thin-film Indium-Tin-Oxide layers by magnetron sputtering is the spacing between the anode and cathode electrodes, by which the conditions of plasma deposition and the properties of the resulting films are controlled. In this paper, thin ITO films are deposited on glass substrates using the DC-magnetron sputtering technique at RT for different electrode spacing. The thickness of the layers has been measured in the range 110-370 nm. The XRD studies confirm that crystalline structure of ITO is cubic bixbyite. The sheet resistance of the samples prepared at the electrode spacing of 5, 7, 9, and 11 cm, are 17. 7, 16, 1723, and 5207 Ω /□ , respectively. The transmittance of the films in the spectral range of 400-800 nm is 75-85%. The lowest sheet resistance of 16 Ω /□ is obtained at the spacing of 7 cm, having a transparency of 85% and a thickness of 230nm, which confirms that it is appropriate for use as the transparent contact in amorphous silicon solar cells. For such samples the average grain size of the crystallites and the root-mean-square of the roughness of the surface are 50± 5 nm and ≈ 1. 97 nm, respectively. The process simulations are also achieved using xpdp1, X'Pert and MATLAB software.

Cites

No record.

References

No record.

Cite

APA: Copy

Kosarian, Abdolnabi, Keramatzadeh, Alireza, SHAKIBA, MARYAM, Kaabi, Hooman, & FARSHIDI, EBRAHIM. (2020). Improvement of electrical and opt ical properties of thin ITO films by modifying electrode spacing in DC magnetron sputtering. TABRIZ JOURNAL OF ELECTRICAL ENGINEERING, 50(1 (91) ), 351-359. SID. https://sid.ir/paper/389469/en

Vancouver: Copy

Kosarian Abdolnabi, Keramatzadeh Alireza, SHAKIBA MARYAM, Kaabi Hooman, FARSHIDI EBRAHIM. Improvement of electrical and opt ical properties of thin ITO films by modifying electrode spacing in DC magnetron sputtering. TABRIZ JOURNAL OF ELECTRICAL ENGINEERING[Internet]. 2020;50(1 (91) ):351-359. Available from: https://sid.ir/paper/389469/en

IEEE: Copy

Abdolnabi Kosarian, Alireza Keramatzadeh, MARYAM SHAKIBA, Hooman Kaabi, and EBRAHIM FARSHIDI, “Improvement of electrical and opt ical properties of thin ITO films by modifying electrode spacing in DC magnetron sputtering,” TABRIZ JOURNAL OF ELECTRICAL ENGINEERING, vol. 50, no. 1 (91) , pp. 351–359, 2020, [Online]. Available: https://sid.ir/paper/389469/en

Related Journal Papers

No record.

Related Seminar Papers

No record.

Related Plans

No record.

Recommended Workshops