Proposing a Novel Write Circuit to Reduce Energy and Delay of Writing Operations in STT-MRAM Memories Using the Temperature Method

Q: How can I download an article?

To download an article from SID, first log in to the site, search for the article title, and click on the 'Download Article' option.

Q: How can I download an ISI article?

To download an ISI article on SID, enter the keyword or article title in the search bar, view the relevant results, click on the desired article, and select the 'Download Article' option.

Q: How can I access the SID database?

To access the SID database, visit SID.ir, create an account, and log in to access scientific resources.

Q: Is downloading articles from SID free?

Some articles on SID are available for free, while others require payment. Details are specified on the article's page.

Hajisadeghi A.M.; Zarandi H.R.; JALILIAN SH.

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Journal Paper

Paper Information

Journal: NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, B- MUHANDISI -I KAMPYUTAR Year:2021 | Volume:19 | Issue:1 Page(s): 27-34

Download Full-Text

Persian Verion

View:

311

Download:

Cites:

Information Journal Paper

Title

Proposing a Novel Write Circuit to Reduce Energy and Delay of Writing Operations in STT-MRAM Memories Using the Temperature Method

Author(s)

Hajisadeghi A.M. | Zarandi H.R. | JALILIAN SH. | Issue Writer Certificate

Keywords

Emerging non-volatile memoryQ1

STT-MRAM memoryQ1

write energyQ1

process variation (PV)Q1

write error (WE)Q1

Abstract

With the advancement of technology and the shrinking dimensions of transistors in CMOS technology, several challenges have arisen. One of the main concerns in using CMOS-based memory is the high power consumption of this type of memory. Therefore, new and non-volatile memories were introduced to address the shortcomings of conventional volatile memory. One of the emerging non-volatile technologies is STT-MRAM memory, an effective and efficient alternative to conventional memory such as SRAMs due to low leakage power, high density, and short access time. The positive features of STT-MRAMs make it possible to use them at different memory hierarchy levels, especially the cache level. However, STT-MRAMs suffer from high write energy. In this paper, we present a new write circuit using the temperature method; in addition to improving the high write energy, write delay is also improved. The proposed circuit lead to 22. 5% and 18. 62% improvement in energy and writing delay, respectively, compared to the existing methods.

Cites

No record.

References

No record.

Cite

APA: Copy

Hajisadeghi, A.M., Zarandi, H.R., & JALILIAN, SH.. (2021). Proposing a Novel Write Circuit to Reduce Energy and Delay of Writing Operations in STT-MRAM Memories Using the Temperature Method. NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, B- MUHANDISI -I KAMPYUTAR, 19(1 ), 27-34. SID. https://sid.ir/paper/394777/en

Vancouver: Copy

Hajisadeghi A.M., Zarandi H.R., JALILIAN SH.. Proposing a Novel Write Circuit to Reduce Energy and Delay of Writing Operations in STT-MRAM Memories Using the Temperature Method. NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, B- MUHANDISI -I KAMPYUTAR[Internet]. 2021;19(1 ):27-34. Available from: https://sid.ir/paper/394777/en

IEEE: Copy

A.M. Hajisadeghi, H.R. Zarandi, and SH. JALILIAN, “Proposing a Novel Write Circuit to Reduce Energy and Delay of Writing Operations in STT-MRAM Memories Using the Temperature Method,” NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, B- MUHANDISI -I KAMPYUTAR, vol. 19, no. 1 , pp. 27–34, 2021, [Online]. Available: https://sid.ir/paper/394777/en

Related Journal Papers

No record.

Related Seminar Papers

No record.

Related Plans

No record.

Recommended Workshops