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Cites:

Information Journal Paper

Title

Topological Insulator Phases and Zero-line Channels in Graphene

Pages

  106-113

Abstract

Topological phases can be induced in single and bilayer Graphene in the presence of appropriate spin-orbit coupling and external potentials. We survey the characteristics of the different metallic 1D zero-line channels at bulk-vacuum edges and at interfaces between regions with different bulk topological orders in single and bilayer Graphene. We use a tight-binding Hamiltonian for ribbon geometries to study the characteristics of the 1D zero-line channels appearing at the interfaces between regions of different Topological phases. Depending on the resulting states, the number of 1D metallic channels at interface and edge differ so that these can be thought as a characterization of the states.

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    APA: Copy

    Rashidian, Zeinab, & SALEHI, AMIN. (2019). Topological Insulator Phases and Zero-line Channels in Graphene. JOURNAL OF RESEARCH ON MANY BODY SYSTEMS, 9(3 (22) ), 106-113. SID. https://sid.ir/paper/404157/en

    Vancouver: Copy

    Rashidian Zeinab, SALEHI AMIN. Topological Insulator Phases and Zero-line Channels in Graphene. JOURNAL OF RESEARCH ON MANY BODY SYSTEMS[Internet]. 2019;9(3 (22) ):106-113. Available from: https://sid.ir/paper/404157/en

    IEEE: Copy

    Zeinab Rashidian, and AMIN SALEHI, “Topological Insulator Phases and Zero-line Channels in Graphene,” JOURNAL OF RESEARCH ON MANY BODY SYSTEMS, vol. 9, no. 3 (22) , pp. 106–113, 2019, [Online]. Available: https://sid.ir/paper/404157/en

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