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Cites:

Information Journal Paper

Title

RESIDUAL STRESS IN CU SPUTTERED FILMS ON GLASS SUBSTRATES AT DIFFERENT SUBSTRATE TEMPERATURES

Pages

  277-282

Abstract

 Copper films of 300 nm thickness deposited by planar magnetron sputtering on  glass substrates, for substrate temperatures between 300 and 500 K, and deposition rate of 10 Ås−1. Microstructure of these films was obtained by X-ray diffraction, while the texture mode of diffractometer was used for stress measurement by the sin2ψ technique. The components of the stress tensor are obtained using measurements at three different φ angles of 0, 45 and 90 degrees by proposed technique in this work. The relation between stress in these films and the processes in film growth through structure zone model (SZM) is explained.

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    • Cite

    APA: Copy

    SAVALOUNI, H., TAHERIZADEH, A., & ZENDEHNAM, A.. (2004). RESIDUAL STRESS IN CU SPUTTERED FILMS ON GLASS SUBSTRATES AT DIFFERENT SUBSTRATE TEMPERATURES. JOURNAL OF SCIENCES ISLAMIC REPUBLIC OF IRAN, 15(3), 277-282. SID. https://sid.ir/paper/529070/en

    Vancouver: Copy

    SAVALOUNI H., TAHERIZADEH A., ZENDEHNAM A.. RESIDUAL STRESS IN CU SPUTTERED FILMS ON GLASS SUBSTRATES AT DIFFERENT SUBSTRATE TEMPERATURES. JOURNAL OF SCIENCES ISLAMIC REPUBLIC OF IRAN[Internet]. 2004;15(3):277-282. Available from: https://sid.ir/paper/529070/en

    IEEE: Copy

    H. SAVALOUNI, A. TAHERIZADEH, and A. ZENDEHNAM, “RESIDUAL STRESS IN CU SPUTTERED FILMS ON GLASS SUBSTRATES AT DIFFERENT SUBSTRATE TEMPERATURES,” JOURNAL OF SCIENCES ISLAMIC REPUBLIC OF IRAN, vol. 15, no. 3, pp. 277–282, 2004, [Online]. Available: https://sid.ir/paper/529070/en

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