INVESTIGATION OF NEW STRUCTURES FOR CARBON NANOTUBE FETS

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HOSSEINI S.E.; FAEZ R.

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Paper Information

Journal: NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, A- MUHANDISI -I BARQ Year:2007 | Volume:5 | Issue:3 Page(s): 173-177

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Information Journal Paper

Title

INVESTIGATION OF NEW STRUCTURES FOR CARBON NANOTUBE FETS

Author(s)

HOSSEINI S.E. | FAEZ R. | Issue Writer Certificate

Keywords

CARBON NANOTUBEQ4

FETQ4

SIMULATIONQ4

OUTPUT CHARACTERISTICSQ4

CNTQ4

Abstract

A CARBON NANOTUBE field effect transistor (CNTFET) with Schottky contacts for the drain and the source has been investigated. It is shown that the saturation region of the transistor OUTPUT CHARACTERISTICS is small. This limits the application of the transistor. To improve the saturation range in the OUTPUT CHARACTERISTICS, new structures are proposed, and the SIMULATION results are compared. The proposed structures have supperior OUTPUT CHARACTERISTICS.

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APA: Copy

HOSSEINI, S.E., & FAEZ, R.. (2007). INVESTIGATION OF NEW STRUCTURES FOR CARBON NANOTUBE FETS. NASHRIYYAH-I MUHANDESI-I BARQ VA MUHANDESI-I KAMPYUTAR-I IRAN (PERSIAN), 5(3), 173-177. SID. https://sid.ir/paper/53732/en

Vancouver: Copy

HOSSEINI S.E., FAEZ R.. INVESTIGATION OF NEW STRUCTURES FOR CARBON NANOTUBE FETS. NASHRIYYAH-I MUHANDESI-I BARQ VA MUHANDESI-I KAMPYUTAR-I IRAN (PERSIAN)[Internet]. 2007;5(3):173-177. Available from: https://sid.ir/paper/53732/en

IEEE: Copy

S.E. HOSSEINI, and R. FAEZ, “INVESTIGATION OF NEW STRUCTURES FOR CARBON NANOTUBE FETS,” NASHRIYYAH-I MUHANDESI-I BARQ VA MUHANDESI-I KAMPYUTAR-I IRAN (PERSIAN), vol. 5, no. 3, pp. 173–177, 2007, [Online]. Available: https://sid.ir/paper/53732/en

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