Information Journal Paper
APA:
CopyLORENZ, L., KNAPP, A., & MARZ, M.. (1998). COOLMOSTM-A NEW MILESTONE IN HIGH VOLTAGE POWER MOS. PROCEEDINGS OF THE IEEE POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), -(-), 3-10. SID. https://sid.ir/paper/605216/en
Vancouver:
CopyLORENZ L., KNAPP A., MARZ M.. COOLMOSTM-A NEW MILESTONE IN HIGH VOLTAGE POWER MOS. PROCEEDINGS OF THE IEEE POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)[Internet]. 1998;-(-):3-10. Available from: https://sid.ir/paper/605216/en
IEEE:
CopyL. LORENZ, A. KNAPP, and M. MARZ, “COOLMOSTM-A NEW MILESTONE IN HIGH VOLTAGE POWER MOS,” PROCEEDINGS OF THE IEEE POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), vol. -, no. -, pp. 3–10, 1998, [Online]. Available: https://sid.ir/paper/605216/en