A HIGH SPEED SIGE VCO BASED ON SELF INJECTION LOCKING SCHEME

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SANIEI N.; JAHANSHAHI H.

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Paper Information

Journal: IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION B- ENGINEERING Year:2007 | Volume:31 | Issue:B6 Page(s): 641-650

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Title

A HIGH SPEED SIGE VCO BASED ON SELF INJECTION LOCKING SCHEME

Author(s)

SANIEI N. | JAHANSHAHI H. | Issue Writer Certificate

Keywords

SILICON GERMANIUM (SIGE)Q3

HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)Q3

HIGH-SPEED CIRCUITQ3

VOLTAGE-CONTROLLED OSCILLATOR (VCO)Q3

PHASE NOISEQ3

DIFFERENTIAL STAGEQ3

INJECTION LOCKING OSCILLATORQ3

Abstract

This paper discusses the design and implementation of an inductorless differential VCO with a maximum oscillation frequency of 20 GHz, in a 47 GHz SiGe process technology. The VCO is based on a full-wave rectification frequency-doubling technique, applied to a half rate differential single-stage feedback oscillator. It also benefits from a new circuit phenomenon named hereinafter Self Injection Locking (SIL). The implemented VCO has an area of 0.5 mm2 and features a remarkably high ratio of VCO frequency to process fT. Based on measurement results, the VCO consumes a DC power of less than 165 mW and exhibits a PHASE NOISE of -96 dBc/Hz at 1 MHz offset.

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APA: Copy

SANIEI, N., & JAHANSHAHI, H.. (2007). A HIGH SPEED SIGE VCO BASED ON SELF INJECTION LOCKING SCHEME. IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION B- ENGINEERING, 31(B6), 641-650. SID. https://sid.ir/paper/62388/en

Vancouver: Copy

SANIEI N., JAHANSHAHI H.. A HIGH SPEED SIGE VCO BASED ON SELF INJECTION LOCKING SCHEME. IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION B- ENGINEERING[Internet]. 2007;31(B6):641-650. Available from: https://sid.ir/paper/62388/en

IEEE: Copy

N. SANIEI, and H. JAHANSHAHI, “A HIGH SPEED SIGE VCO BASED ON SELF INJECTION LOCKING SCHEME,” IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION B- ENGINEERING, vol. 31, no. B6, pp. 641–650, 2007, [Online]. Available: https://sid.ir/paper/62388/en

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