Information Journal Paper
APA:
CopyTAVANAZADEH, PARISA, DAGHIGHI, ARASH, & MAHDAVI NASAB, HOMAYOUN. (2011). CROSSTALK ENHANCEMENT IN 32 NM FD SOI MOSFET USING HR SUBSTRATE AND MULTILAYER BOX. MAJLESI JOURNAL OF ELECTRICAL ENGINEERING, 5(2 (17)), 38-43. SID. https://sid.ir/paper/627022/en
Vancouver:
CopyTAVANAZADEH PARISA, DAGHIGHI ARASH, MAHDAVI NASAB HOMAYOUN. CROSSTALK ENHANCEMENT IN 32 NM FD SOI MOSFET USING HR SUBSTRATE AND MULTILAYER BOX. MAJLESI JOURNAL OF ELECTRICAL ENGINEERING[Internet]. 2011;5(2 (17)):38-43. Available from: https://sid.ir/paper/627022/en
IEEE:
CopyPARISA TAVANAZADEH, ARASH DAGHIGHI, and HOMAYOUN MAHDAVI NASAB, “CROSSTALK ENHANCEMENT IN 32 NM FD SOI MOSFET USING HR SUBSTRATE AND MULTILAYER BOX,” MAJLESI JOURNAL OF ELECTRICAL ENGINEERING, vol. 5, no. 2 (17), pp. 38–43, 2011, [Online]. Available: https://sid.ir/paper/627022/en