BILAYER GRAPHENE-HEXAGONAL BORON NITRIDE HETEROSTRUCTURE NEGATIVE DIFFERENTIAL RESISTANCE INTERLAYER TUNNEL FETS

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KANG S.

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Journal Paper

Paper Information

Journal: ELECTRON DEVICE LETTERS, IEEE Year:2015 | Volume:36 | Issue:- Page(s): 405-407

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Information Journal Paper

Title

BILAYER GRAPHENE-HEXAGONAL BORON NITRIDE HETEROSTRUCTURE NEGATIVE DIFFERENTIAL RESISTANCE INTERLAYER TUNNEL FETS

Author(s)

KANG S. | Issue Writer Certificate

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Abstract

Cites

A NOVEL LIGHTLY DOPED DRAIN AND SOURCE CARBON NANOTUBE FIELD EFFECT TRANSISTOR (CNTFET) WITH NEGATIVE DIFFERENTIAL RESISTANCE

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APA: Copy

KANG, S.. (2015). BILAYER GRAPHENE-HEXAGONAL BORON NITRIDE HETEROSTRUCTURE NEGATIVE DIFFERENTIAL RESISTANCE INTERLAYER TUNNEL FETS. ELECTRON DEVICE LETTERS, IEEE, 36(-), 405-407. SID. https://sid.ir/paper/710028/en

Vancouver: Copy

KANG S.. BILAYER GRAPHENE-HEXAGONAL BORON NITRIDE HETEROSTRUCTURE NEGATIVE DIFFERENTIAL RESISTANCE INTERLAYER TUNNEL FETS. ELECTRON DEVICE LETTERS, IEEE[Internet]. 2015;36(-):405-407. Available from: https://sid.ir/paper/710028/en

IEEE: Copy

S. KANG, “BILAYER GRAPHENE-HEXAGONAL BORON NITRIDE HETEROSTRUCTURE NEGATIVE DIFFERENTIAL RESISTANCE INTERLAYER TUNNEL FETS,” ELECTRON DEVICE LETTERS, IEEE, vol. 36, no. -, pp. 405–407, 2015, [Online]. Available: https://sid.ir/paper/710028/en

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