Information Journal Paper
APA:
Copy. (2017). A Resonant tunneling nanowire field effect transistor with physical contractions: A negative differential resistance device for low power very large scale integeration application. JOURNAL OF ELECTRONIC MATERIALS, 47(-), 1091-1098. SID. https://sid.ir/paper/738516/en
Vancouver:
Copy. A Resonant tunneling nanowire field effect transistor with physical contractions: A negative differential resistance device for low power very large scale integeration application. JOURNAL OF ELECTRONIC MATERIALS[Internet]. 2017;47(-):1091-1098. Available from: https://sid.ir/paper/738516/en
IEEE:
Copy, “A Resonant tunneling nanowire field effect transistor with physical contractions: A negative differential resistance device for low power very large scale integeration application,” JOURNAL OF ELECTRONIC MATERIALS, vol. 47, no. -, pp. 1091–1098, 2017, [Online]. Available: https://sid.ir/paper/738516/en