Information Journal Paper
APA:
Copy. (2017). Theoretical investigation of GaAsBi/GaAsN tunneling field-effect transistors with type-II staggered tunneling junction. SUPERLATTICES AND MICROSTRUCTURES, 106(-), 139-146. SID. https://sid.ir/paper/739477/en
Vancouver:
Copy. Theoretical investigation of GaAsBi/GaAsN tunneling field-effect transistors with type-II staggered tunneling junction. SUPERLATTICES AND MICROSTRUCTURES[Internet]. 2017;106(-):139-146. Available from: https://sid.ir/paper/739477/en
IEEE:
Copy, “Theoretical investigation of GaAsBi/GaAsN tunneling field-effect transistors with type-II staggered tunneling junction,” SUPERLATTICES AND MICROSTRUCTURES, vol. 106, no. -, pp. 139–146, 2017, [Online]. Available: https://sid.ir/paper/739477/en