Information Journal Paper
APA:
Copy. (2018). Gate leakage tunneling impact on the InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor. IEEE TRANSACTIONS ON ELECTRON DEVICES, 99(-), 1-8. SID. https://sid.ir/paper/741244/en
Vancouver:
Copy. Gate leakage tunneling impact on the InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor. IEEE TRANSACTIONS ON ELECTRON DEVICES[Internet]. 2018;99(-):1-8. Available from: https://sid.ir/paper/741244/en
IEEE:
Copy, “Gate leakage tunneling impact on the InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 99, no. -, pp. 1–8, 2018, [Online]. Available: https://sid.ir/paper/741244/en