CHARACTERIZATION OF INSB INTERFACE WITH OXIDE FILMS GROWN BY PECVD METHOD AND QUALITY CARRIED OUT BY C-V MEASUREMENT

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SHIRIN ZADEH HAJI; BORNAYE ZENOOZI SORAYA; SAREMI NIA GHODRATOLLAH; SIMCHI HAMID RAZA

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Seminar Paper

Paper Information

Seminar: NATIONAL VACUUM CONFERENCE IRAN
Year:2008 | Issue:3

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Title

CHARACTERIZATION OF INSB INTERFACE WITH OXIDE FILMS GROWN BY PECVD METHOD AND QUALITY CARRIED OUT BY C-V MEASUREMENT

Author(s)

SHIRIN ZADEH HAJI | BORNAYE ZENOOZI SORAYA | SAREMI NIA GHODRATOLLAH | SIMCHI HAMID RAZA

Keywords

ELECTRONIC STRUCTURE

ELECTRICAL PROPERTIES OF SURFACE

SIO2

MIS STRUCTURE

PECVD SYSTEM

Abstract

SIO2 AND SI3N4 LAYERS ARE FORMED ON INSB WAFER BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD) TECHNIQUE, DUE TO THE SIGNIFICANT OF SURFACE LEAKAGE CURRENT IS LIMITING IN LONG WAVELENGTH INFRARED DETECTORS, WHICH GIVES RISE TO MIS (METAL INSULATOR SEMICONDUCTOR) CAPACITOR FORMATION. IN THIS DOCUMENT, ALL OF DEPOSITION PROCEDURES, SEMICONDUCTOR SURFACE PASSIVATION NECESSITY, QUALITY OF DEPOSITED LAYER AND IDENTIFYING THE TYPE OF SUBSTRATE WILL BE DISCUSSED.

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APA: Copy

SHIRIN ZADEH, HAJI, BORNAYE ZENOOZI, SORAYA, SAREMI NIA, GHODRATOLLAH, & SIMCHI, HAMID RAZA. (2008). CHARACTERIZATION OF INSB INTERFACE WITH OXIDE FILMS GROWN BY PECVD METHOD AND QUALITY CARRIED OUT BY C-V MEASUREMENT. NATIONAL VACUUM CONFERENCE IRAN. SID. https://sid.ir/paper/905397/en

Vancouver: Copy

SHIRIN ZADEH HAJI, BORNAYE ZENOOZI SORAYA, SAREMI NIA GHODRATOLLAH, SIMCHI HAMID RAZA. CHARACTERIZATION OF INSB INTERFACE WITH OXIDE FILMS GROWN BY PECVD METHOD AND QUALITY CARRIED OUT BY C-V MEASUREMENT. 2008. Available from: https://sid.ir/paper/905397/en

IEEE: Copy

HAJI SHIRIN ZADEH, SORAYA BORNAYE ZENOOZI, GHODRATOLLAH SAREMI NIA, and HAMID RAZA SIMCHI, “CHARACTERIZATION OF INSB INTERFACE WITH OXIDE FILMS GROWN BY PECVD METHOD AND QUALITY CARRIED OUT BY C-V MEASUREMENT,” presented at the NATIONAL VACUUM CONFERENCE IRAN. 2008, [Online]. Available: https://sid.ir/paper/905397/en

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