EFFECTS OF ANNEALING AN VACUUM ON ELECTRICAL, OPTICAL AND STRUCTURAL CHARACTERISTIC OF ITO THIN FILMS BY ELECTRON BEAM EVAPORATION

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MIRZAEI FATEMEH; MALEKI MOHAMMAD HADI; MIRJALILI GHAZANFAR

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Seminar Paper

Paper Information

Seminar: NATIONAL VACUUM CONFERENCE IRAN
Year:2008 | Issue:3

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Title

EFFECTS OF ANNEALING AN VACUUM ON ELECTRICAL, OPTICAL AND STRUCTURAL CHARACTERISTIC OF ITO THIN FILMS BY ELECTRON BEAM EVAPORATION

Author(s)

MIRZAEI FATEMEH | MALEKI MOHAMMAD HADI | MIRJALILI GHAZANFAR

Keywords

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Abstract

TIN DOPED OXIDE, ITO THIN FILMS WERE PREPARED ON GLASS SUBSTRATE AT 200°C BY ELECTRON BEAM TECHNIQUE. DEPOSITED FILMS WERE ANNEALED AT DIFFERENT TEMPERATURES AND DIFFERENT ENVIRONMENT. THE RESISTANCE OF FILMS DEPOSITED IS ABOUT 1/84×10-1ΩCM AND FALLS DOWN TO 1/35×10-4ΩCM AFTER ANNEALING 500°C AT ATMOSPHERE AND 400OC. AVERAGE TRANSMITTANCE IN VISIBLE RANGE IS ABOUT 78/66%. THE LATTICE CONSTANT OF ITO THIN FILMS WERE 10/08A0 BY XRD. OPTICAL BAND GAP CALCULATED 4/222. THE STRUCTURAL, ELECTRICAL AND OPTICAL CHARACTERISTICS OF ITO SAMPLES HAVE BEEN ANALYZED BY XRD, AFM, FOUR POINT PROBE METHOD AND UV/VIS/IR SPECTROPHOTOMETER.

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APA: Copy

MIRZAEI, FATEMEH, MALEKI, MOHAMMAD HADI, & MIRJALILI, GHAZANFAR. (2008). EFFECTS OF ANNEALING AN VACUUM ON ELECTRICAL, OPTICAL AND STRUCTURAL CHARACTERISTIC OF ITO THIN FILMS BY ELECTRON BEAM EVAPORATION. NATIONAL VACUUM CONFERENCE IRAN. SID. https://sid.ir/paper/905405/en

Vancouver: Copy

MIRZAEI FATEMEH, MALEKI MOHAMMAD HADI, MIRJALILI GHAZANFAR. EFFECTS OF ANNEALING AN VACUUM ON ELECTRICAL, OPTICAL AND STRUCTURAL CHARACTERISTIC OF ITO THIN FILMS BY ELECTRON BEAM EVAPORATION. 2008. Available from: https://sid.ir/paper/905405/en

IEEE: Copy

FATEMEH MIRZAEI, MOHAMMAD HADI MALEKI, and GHAZANFAR MIRJALILI, “EFFECTS OF ANNEALING AN VACUUM ON ELECTRICAL, OPTICAL AND STRUCTURAL CHARACTERISTIC OF ITO THIN FILMS BY ELECTRON BEAM EVAPORATION,” presented at the NATIONAL VACUUM CONFERENCE IRAN. 2008, [Online]. Available: https://sid.ir/paper/905405/en

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