DETERMINATION OF TI/SI INTERFACE CHARGE DENSITY GROWN BY PLASMA DEPOSITION

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SADEGHZADEH MOHAMAD ALI; GHRIB SHAHI LEYLA; ABOLHASANI ELHAM

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Seminar Paper

Paper Information

Seminar: NATIONAL VACUUM CONFERENCE IRAN
Year:2008 | Issue:3

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Title

DETERMINATION OF TI/SI INTERFACE CHARGE DENSITY GROWN BY PLASMA DEPOSITION

Author(s)

SADEGHZADEH MOHAMAD ALI | GHRIB SHAHI LEYLA | ABOLHASANI ELHAM

Keywords

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Abstract

IN THIS PAPER A TI/SI METAL-SEMICONDUCTOR JUNCTION AS THE GATE, WAS FORMED BY PLASMA DEPOSITION ON THE CLEAN SI SURFACE OF P-SI/SIGE/SI INVERTED MODULATION DOPED STRUCTURES. THERE IS A TWO DIMENSIONAL HOLE GAS (2DHG) IN THE ALLOY LAYER OF THIS STRUCTURE AND ITS AREAL SHEET DENSITY NS CAN BE CONTROLLED BY APPLICATION A VOLTAGE TO THE GATE. THE TI/SI INTERFACE CHARGE DENSITY HAS BEEN DETERMINED BY THEORETICAL SIMULATION OF EXPERIMENTAL RESULTS OF NS – VG. THE RESULTS INDICATES THAT AS THE SI CAP THICKNESS INCREASES FROM 180 UP TO 480NM, THE TI/SI INTERFACE CHARGE DENSITY VARIES FROM 4.6 DOWN TO 1.95×1015 CM-2 RESPECTIVELY.

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APA: Copy

SADEGHZADEH, MOHAMAD ALI, GHRIB SHAHI, LEYLA, & ABOLHASANI, ELHAM. (2008). DETERMINATION OF TI/SI INTERFACE CHARGE DENSITY GROWN BY PLASMA DEPOSITION. NATIONAL VACUUM CONFERENCE IRAN. SID. https://sid.ir/paper/905413/en

Vancouver: Copy

SADEGHZADEH MOHAMAD ALI, GHRIB SHAHI LEYLA, ABOLHASANI ELHAM. DETERMINATION OF TI/SI INTERFACE CHARGE DENSITY GROWN BY PLASMA DEPOSITION. 2008. Available from: https://sid.ir/paper/905413/en

IEEE: Copy

MOHAMAD ALI SADEGHZADEH, LEYLA GHRIB SHAHI, and ELHAM ABOLHASANI, “DETERMINATION OF TI/SI INTERFACE CHARGE DENSITY GROWN BY PLASMA DEPOSITION,” presented at the NATIONAL VACUUM CONFERENCE IRAN. 2008, [Online]. Available: https://sid.ir/paper/905413/en

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