ABSORBANCE MEASUREMENT OF FREE STANDING POROUS SILICON

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ZAFARI RAZIEH; SABET DARIANI REZA

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Seminar Paper

Paper Information

Seminar: NATIONAL VACUUM CONFERENCE IRAN
Year:2012 | Issue:5

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Title

ABSORBANCE MEASUREMENT OF FREE STANDING POROUS SILICON

Author(s)

ZAFARI RAZIEH | SABET DARIANI REZA

Keywords

Not Registered.

Abstract

POROUS SILICON ARE PREPARED FROM P-TYPE SI WAFER BY ELECTROCHEMICAL METHOD WITH ETCHING TIMES OF 10, 20, 30, 40 MIN. SEM TOP AND CROSS SECTION VIEWS ARE MEASURED AND SHOWED THAT WITH INCREASING ETCHING TIME, THICKNESS OF POROUS LAYER AND POROSITY INCREASES. ALSO, ABSORBANCE OF SAMPLES IS DECREASED WITH INCREASING ETCHING TIME.

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Cite

APA: Copy

ZAFARI, RAZIEH, & SABET DARIANI, REZA. (2012). ABSORBANCE MEASUREMENT OF FREE STANDING POROUS SILICON. NATIONAL VACUUM CONFERENCE IRAN. SID. https://sid.ir/paper/906979/en

Vancouver: Copy

ZAFARI RAZIEH, SABET DARIANI REZA. ABSORBANCE MEASUREMENT OF FREE STANDING POROUS SILICON. 2012. Available from: https://sid.ir/paper/906979/en

IEEE: Copy

RAZIEH ZAFARI, and REZA SABET DARIANI, “ABSORBANCE MEASUREMENT OF FREE STANDING POROUS SILICON,” presented at the NATIONAL VACUUM CONFERENCE IRAN. 2012, [Online]. Available: https://sid.ir/paper/906979/en

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