FABRICATION OF NANO-POROUS SILICON BY ELECTROCHEMICAL ETCH OF HIGH RESISTIVITY SILICON WAFER

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Nangir M.; MASSOUDI A.; Taiebifard S.A.; YAZDANIRAD R.

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Seminar Paper

Paper Information

Seminar: ANNUAL ELECTROCHEMISTRY SEMINAR OF IRAN
Year:2015 | Issue:11

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Title

FABRICATION OF NANO-POROUS SILICON BY ELECTROCHEMICAL ETCH OF HIGH RESISTIVITY SILICON WAFER

Author(s)

Nangir M. | MASSOUDI A. | Taiebifard S.A. | YAZDANIRAD R. | Issue Writer Certificate

Keywords

POROUS SILICON

ELECTROCHEMICAL ETCH

NANO-POROSITY

FESEM

Abstract

INTRODUCTION POROUS SILICON (PS) HAS ATTRACTED MUCH ATTENTION AS PROMISING SEMICONDUCTOR MATERIALS FOR OPTICAL AND ELECTRONIC DEVICE APPLICATIONS. [1, 2]. ELECTROCHEMICAL ANODIC ETCHING METHOD IS AN EFFECTIVE TECHNIQUE TO PRODUCE UNIFORM PORES ON THE SURFACE OF P-TYPE SILICON WAFER. SEVERAL PARAMETERS ARE USED TO OPTIMIZE THE CHARACTERIZATION OF SURFACE OF A POROUS LAYER, SUCH AS ETCHING TIME, CURRENT DENSITY AND CONCENTRATION OF ETCHING SOLUTION [3, 4, 5]. IN THIS RESEARCH, RESISTANCE EFFECT ON TWO WAFERS WITH RESISTIVITY 10Ω.CM AND 0.04 W.CM WAS INVESTIGATED IN CONSTANT CONDITIONS.

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APA: Copy

Nangir, M., MASSOUDI, A., Taiebifard, S.A., & YAZDANIRAD, R.. (2015). FABRICATION OF NANO-POROUS SILICON BY ELECTROCHEMICAL ETCH OF HIGH RESISTIVITY SILICON WAFER. ANNUAL ELECTROCHEMISTRY SEMINAR OF IRAN. SID. https://sid.ir/paper/920121/en

Vancouver: Copy

Nangir M., MASSOUDI A., Taiebifard S.A., YAZDANIRAD R.. FABRICATION OF NANO-POROUS SILICON BY ELECTROCHEMICAL ETCH OF HIGH RESISTIVITY SILICON WAFER. 2015. Available from: https://sid.ir/paper/920121/en

IEEE: Copy

M. Nangir, A. MASSOUDI, S.A. Taiebifard, and R. YAZDANIRAD, “FABRICATION OF NANO-POROUS SILICON BY ELECTROCHEMICAL ETCH OF HIGH RESISTIVITY SILICON WAFER,” presented at the ANNUAL ELECTROCHEMISTRY SEMINAR OF IRAN. 2015, [Online]. Available: https://sid.ir/paper/920121/en

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